SLVK225 August 2025 TPS7H5020-SEP
During the SEL testing the device was heated to 125°C by using PID controlled heat gun (MISTRAL 6 System (120V, 2400W)). The temperature of the die was constantly monitored during testing at TAMU through an IR camera integrated into the control loop to create closed-loop temperature control. The die temperature was verified using a standalone FLIR thermal camera prior to exposure to heavy ions at KSEE.
The species used for the SEL testing was 109Ag (TAMU) at 15MeV/nucleon and 109Ag (KSEE) at 19.5MeV/nucleon. For both ions an angle of incidence of 0° was used to achieve a LETEFF of ≈ 48MeV·cm2/mg (for more details refer to Table 8-4). The kinetic energy in the vacuum for 109Ag (TAMU) is 1.635 GeV and 109Ag (KSEE) is 2.125GeV. Flux of ≈9.14 × 104 to 1.26 × 105 ions/(cm2×s) and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈ 2 minutes. The 6 devices were powered up and exposed to the heavy-ions using the maximum recommended input voltage of 14V and max programmable VLDO voltage of 5.5V. Depending on the operational mode PVIN was either tied to VIN or VLDO, for more information refer to the Table 6-1. No SEL events were observed during all six runs, indicating that the TPS7H5020-SEP is SEL-free up to 48 MeV·cm2/mg.Table 8-4 shows the SEL test conditions and results. Figure 7-1 and Figure 7-1 show a plot of the current versus time for runs #1 and #3, respectively.
| Run # | Unit # |
Facility |
Device Type |
Mode |
Ion | LETEFF (MeV·cm2/mg) | Flux (ions/(cm2×s)) | Fluence (ions/cm2) |
VIN (V) |
PVIN (V) |
VLDO |
SEL (# Events) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 | 1 |
TAMU |
TPS7H5020-SEP |
Silicon |
109Ag |
47.7 |
9.15 x 104 |
1 x 107 |
14 |
14 |
5.5 |
0 |
| 2 | 2 |
TAMU |
TPS7H5020-SEP |
Silicon |
109Ag |
47.7 |
1.09 x 105 |
1 x 107 |
14 |
14 |
5.5 |
0 |
| 3 | 3 |
TAMU |
TPS7H5020-SEP |
GaN |
109Ag |
47.7 |
1.13 x 105 |
1 x 107 |
14 |
5.5 |
5.5 |
0 |
|
4 |
4 |
TAMU |
TPS7H5020-SEP |
GaN |
109Ag |
47.7 |
1.16 x 105 |
1 x 107 |
14 |
5.5 |
5.5 |
0 |
|
5 |
5 |
KSEE |
TPS7H5020-SEP |
Silicon |
109Ag |
49.1 |
1.06 x 105 |
1 x 107 | 14 |
14 |
5.5 | 0 |
|
6 |
6 |
KSEE |
TPS7H5020-SEP |
GaN |
109Ag | 49.1 |
1.10 x 105 |
1 x 107 | 14 |
5.5 |
5.5 | 0 |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report and combining (or summing) the fluences of the six runs at 125°C (6 × 107), the upper-bound cross-section (using a 95% confidece level) is calculated as:
σSEL ≤ 6.15x 10-8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 125°C.