SLVK225 August 2025 TPS7H5020-SEP
During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using CH # 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.
The species used for the SEB testing was 109Ag (TAMU) at 15MeV/nucleon and 109Ag (KSEE) at 19.5 MeV/nucleon. For both ions an angle of 0° was used to achieve a LETEFF of ≈ 48MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag (TAMU) is 1.635GeV and 109Ag (KSEE) is 2.125GeV. Flux of ≈ 9.67 × 104 to 1.26 × 105 ions/(cm2×s) and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈2 minutes. The 6 devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended bias conditions. No SEB/SEGR current events were observed during the 12 runs, indicating that the TPS7H5020-SEP is SEB/SEGR-free up to LETEFF = 48MeV·cm2/mg and across the full electrical specifications.Table 8-4shows the SEB/SEGR test conditions and results.
| RUN # | UNIT # |
Facility |
Device Type |
Mode |
ION | LETEFF (MeV·cm2/mg) | FLUX (ions/(cm2×s)) | FLUENCE (ions/cm2) | ENABLED STATUS |
VIN (V) |
PVIN (V) |
VLDO (V) |
SEB EVENT? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
7 |
1 |
TAMU |
TPS7H5020-SEP |
Silicon |
109Ag |
47.7 |
9.67 x 104 |
9.99 x 106 |
EN |
14 |
14 |
5.5 |
No |
|
8 |
1 |
TAMU | TPS7H5020-SEP |
Silicon |
109Ag |
47.7 |
9.77 x 104 |
9.99 x 106 | DIS |
14 |
14 |
5.5 |
No |
|
9 |
2 |
TAMU | TPS7H5020-SEP |
Silicon |
109Ag |
47.7 |
1.00 x 105 |
1.00 x 107 |
EN |
14 |
14 |
5.5 |
No |
|
10 |
2 |
TAMU | TPS7H5020-SEP |
Silicon |
109Ag |
47.7 |
1.12 x 105 |
1.00 x 107 |
DIS |
14 |
14 |
5.5 |
No |
|
11 |
3 |
TAMU | TPS7H5020-SEP |
GaN |
109Ag |
47.7 |
1.13 x 105 |
1.00 x 107 |
EN |
14 |
5.5 |
5.5 |
No |
|
12 |
3 |
TAMU | TPS7H5020-SEP |
GaN |
109Ag |
47.7 |
1.18 x 105 |
1.00 x 107 |
DIS |
14 |
5.5 |
5.5 |
No |
|
13 |
4 |
TAMU | TPS7H5020-SEP |
GaN |
109Ag |
47.7 |
1.18 x 105 |
1.00 x 107 |
EN |
14 |
5.5 |
5.5 |
No |
|
14 |
4 |
TAMU | TPS7H5020-SEP |
GaN |
109Ag |
47.7 |
1.26 x 105 |
1.00 x 107 |
DIS |
14 |
5.5 |
5.5 |
No |
|
15 |
5 |
KSEE |
TPS7H5020-SEP |
Silicon |
109Ag |
49.1 |
1.02 x 105 | 1.00 x 107 | EN | 14 |
14 |
5.5 | No |
|
16 |
5 |
KSEE |
TPS7H5020-SEP |
Silicon |
109Ag | 49.1 |
9.54 x 104 |
1.00 x 107 | DIS | 14 |
14 |
5.5 | No |
|
17 |
6 |
KSEE |
TPS7H5020-SEP |
GaN |
109Ag | 49.1 |
1.15 x 105 |
1.00 x 107 | EN | 14 |
5.5 |
5.5 | No |
|
18 |
6 |
KSEE |
TPS7H5020-SEP |
GaN |
109Ag | 49.1 |
1.18 x 105 |
1.00 x 107 | DIS | 14 |
5.5 |
5.5 | No |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:
σSEB ≤ 3.07x 10-8 cm2/device for LETEFF = 75 MeV·cm2/mg and T = 25°C.