8 Single-Event Transients (SET)

SETs are defined as heavy-ion-induced transient upsets on the GATE (OUTH and OUTL tied together) of the TPS7H5020-SEP.

Testing was performed at room temperature (no external temperature control applied). The heavy-ions species used for the SET testing was ¹⁰⁹Ag (TAMU) at 15MeV/nucleon and ¹⁰⁹Ag (KSEE) at 19.5MeV/nucleon (for more details refer to Table 5-1). Flux of ≈10⁵ ions/(cm²×s) and a fluence of ≈10⁷ ions/cm² per run were used for the SET characterization discussed in this chapter.

Waveform size, sample rate, trigger type, value, and signal for all scopes used are presented on Table 8-1.

Open-Loop Configuration

The primary focus of SETs were heavy-ion-induced transient upsets on output signal GATE (OUTH and OUTL tied together). SET testing was done at room temperature at ¹⁰⁹Ag (TAMU) and ¹⁰⁹Ag (KSEE) which produced a LET_EFF of ≈48MeV·cm²/mg. GATE was monitored using a NI PXIe-5110. During testing the scope was set to trigger if the signal exceeded |20%| from nominal using a pulse width trigger. During all SET testing, there was one type of transient recorded that was self-recoverable.

The SET results for 6 devices are shown below in Table 8-4. The transient signature on GATE is shown and the number of transients across the runs and voltages are shown. Since only this transient signature occurred there is high confidence that the TPS7H5020-SEP is SEFI free and the recorded transient signature does not show any overshoot indicating that the TPS7H5020-SEP is safe for GaN operations. Note that for all testing V_LDO was programmed to be 5V.

The upper-bound cross-sections for all bias conditions are shown in Table 8-4.

Figure 8-1 TPS7H5020-SEP Silicon Mode GATE Pulse-Width Transient (Run #19)

Figure 8-2 TPS7H5020-SEP Silicon Mode GATE Pulse-Width Deviation Histogram (Run #19)

Figure 8-3 TPS7H5020-SEP GaN Mode GATE Pulse-Width Transient (Run #21)

Figure 8-4 TPS7H5020-SEP GaN Mode GATE Pulse-Width Deviation Histogram (Run #21)