4 修訂歷史記錄
Changes from D Revision (March 2018) to E Revision
- Changed VIH and VIH to VIL and VIH in the RTHR resistor description in the Setting Current Limit and Voltage Thresholds sectionGo
Changes from C Revision (February 2018) to D Revision
- 更新了特性 和應(yīng)用 部分。在說(shuō)明 和相關(guān)文檔 部分中添加了新的 TI 技術(shù)手冊(cè)參考。Go
- Changed the unit for CPG from µm to mm in the Insulation Specifications tableGo
- Changed the Functional Block DiagramGo
- Changed VIL from min to typ in the VIL equationGo
- Added the Designing for Input Voltages Greater Than 60 V sectionGo
- Added the bidirectional implementation example to the Sourcing and Sinking Inputs sectionGo
Changes from B Revision (September 2017) to C Revision
- Added 將斷線檢測(cè)添加到特性 部分Go
- Added 將多路復(fù)用器輸出信號(hào)使能引腳添加到了特性 部分中，更改了所有需要為 DW 和 D 封裝完成的認(rèn)證Go
- Changed RTHR = 5 kΩ to 4 kΩ in the High-Level Voltage Transition Threshold vs Ambient Temperature graphGo
- Changed the Type 1 RTH value from 3 kΩ to 2.5 kΩ in the Surge, IEC ESD and EFT tableGo
Changes from A Revision (September 2017) to B Revision
- Changed 將狀態(tài)從預(yù)告信息改為生產(chǎn)數(shù)據(jù)Go