ZHCSGU8E June 2017 – August 2018 ISO1211 , ISO1212
PRODUCTION DATA.
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| ISO1211 | ||||||
| PD | Maximum power dissipation, both sides | VSENSE = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω, RTHR = 0 Ω, TJ = 150°C | 450 | mW | ||
| PD1 | Maximum power dissipation, output side (side 1) | VCC1 = 5.5 V, CL = 15 pF, Input 2-MHz 50% duty-cycle square wave at SENSE pin, TJ = 150°C | 20 | mW | ||
| PD2 | Maximum power dissipation, field input side | VSENSE = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω, RTHR = 0 Ω, TJ = 150°C | 430 | mW | ||
| ISO1212 | ||||||
| PD | Maximum power dissipation, both sides | VSENSEx = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω, RTHR = 0 Ω, TJ = 150°C | 900 | mW | ||
| PD1 | Maximum power dissipation, output side (side 1) | VCC1 = 5.5 V, CL = 15 pF, Input 2-MHz 50% duty-cycle square wave at SENSEx pins, TJ = 150°C | 40 | mW | ||
| PD2 | Maximum power dissipation, field input side | VSENSEx = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω, RTHR = 0 Ω, TJ = 150°C | 860 | mW | ||