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ZHCSGU8E June 2017 – August 2018 ISO1211 , ISO1212

PRODUCTION DATA.

封裝選項(xiàng)

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.9 Electrical Characteristics—DC Specification

(Over recommended operating conditions unless otherwise noted).

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_CC1 VOLTAGE SUPPLY
V_{IT+ (UVLO1)}	Positive-going UVLO threshold voltage (V_CC1)					2.25	V
V_{IT– (UVLO1)}	Negative-going UVLO threshold (V_CC1)			1.7			V
V_{HYS (UVLO1)}	UVLO threshold hysteresis (V_CC1)				0.2		V
I_CC1	V_CC1 supply quiescent current	ISO1211	EN = V_CC1		0.6	1	mA
I_CC1	V_CC1 supply quiescent current	ISO1212	EN = V_CC1		1.2	1.9	mA
LOGIC I/O
V_{IT+ (EN)}	Positive-going input logic threshold voltage for EN pin					0.7 × V_CC1	V
V_{IT– (EN)}	Negative-going input logic threshold voltage for EN pin			0.3 × V_CC1			V
V_HYS(EN)	Input hysteresis voltage for EN pin				0.1 × V_CC1		V
I_IH	Low-level input leakage at EN pin		EN = GND1	–10			μA
V_OH	High-level output voltage on OUTx		V_CC1 = 4.5 V; I_OH = –4 mA V_CC1 = 3 V; I_OH = –3 mA V_CC1= 2.25 V; I_OH = –2 mA, see Figure 10	V_CC1 – 0.4			V
V_OL	Low-level output voltage on OUTx		V_CC1 = 4.5 V; I_OH = 4 mA V_CC1 = 3 V; I_OH = 3 mA V_CC1= 2.25 V ; I_OH = 2 mA, see Figure 10			0.4	V
CURRENT LIMIT
I_{(INx+SENSEx),TYP}	Typical sum of current drawn from IN and SENSE pins across temperature		R_THR = 0 Ω, R_SENSE = 562 Ω, V_SENSE = 24 V, –40°C < T_A < 125°C, see Figure 11	2.2		2.47	mA
I_(INx+SENSEx)	Sum of current drawn from IN and SENSE pins		R_THR = 0 Ω, R_SENSE = 562 Ω ± 1%; –60 V < V_SENSE < 0 V, see Figure 11		–0.1		µA
			R_THR = 0 Ω, R_SENSE = 562 Ω ± 1%; 5 V < V_SENSE < V_IL, see Figure 11	1.9		2.5	mA
			R_THR = 0 Ω, R_SENSE = 562 Ω ± 1%; V_IL < V_SENSE < 30 V, see Figure 11	2.05		2.75
			R_THR = 0 Ω, R_SENSE = 562 Ω ± 1%; 30 V < V_SENSE < 36 V, see Figure 11	2.1		2.83
			R_THR = 0 Ω, R_SENSE = 562 Ω ± 1%; 36 V < V_SENSE < 60 V⁽¹⁾, see Figure 11	2.1		3.1
			R_THR = 0 Ω, R_SENSE = 200 Ω ± 1%; –60 V < V_SENSE < 0 V, see Figure 11		–0.1		µA
			R_THR = 0 Ω, R_SENSE = 200 Ω ± 1%; 5 V < V_SENSE < V_IL, see Figure 11	5.3		6.8	mA
			R_THR = 0 Ω, R_SENSE = 200 Ω ± 1%; V_IL < V_SENSE < 36 V⁽¹⁾, see Figure 11	5.5		7
			R_THR = 0 Ω, R_SENSE = 200 Ω ± 1%; 36 V < V_SENSE < 60 V⁽¹⁾, see Figure 11	5.5		7.3
VOLTAGE TRANSITION THRESHOLD ON FIELD SIDE
V_IL	Low level threshold voltage at module input (including R_THR) for output high		R_SENSE = 562 Ω, R_THR = 0 Ω, see Figure 11	6.5	7		V
			R_SENSE = 562 Ω, R_THR = 1 kΩ, see Figure 11	8.7	9.2
			R_SENSE = 562 Ω, R_THR = 4 kΩ, see Figure 11	15.2	15.8
V_IH	High level threshold voltage at module input (including R_THR) for output low		R_SENSE = 562 Ω, R_THR = 0 Ω, see Figure 11		8.2	8.55	V
			R_SENSE = 562 Ω, R_THR = 1 kΩ, see Figure 11		10.4	10.95
			R_SENSE = 562 Ω, R_THR = 4 kΩ, see Figure 11		17	18.25
V_HYS	Threshold voltage hysteresis at module input		R_SENSE = 562 Ω, R_THR = 0 Ω, see Figure 11	1	1.2		V
			R_SENSE = 562 Ω, R_THR = 1 kΩ, see Figure 11	1	1.2
			R_SENSE = 562 Ω, R_THR = 4 kΩ, see Figure 11	1	1.2

(1) See the Thermal Considerations section.