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ZHCSJF4 February 2019 TPS65295

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

RJE|18
- MPQF488C

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsjf4_oa

6.5 Electrical Characteristics

T_J=-40^oC to 125^oC, V_PVIN=12V, V_{PVIN_VPP}=5V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY VOLTAGE
I_{VCC_5V}	VCC_5V supply current	V_{SLP_S4} = V_{VTT_CNTL} = 0 V		5		µA
		V_{SLP_S4} = 5 V, V_{VTT_CNTL} = 0 V, no load		110		µA
		V_{SLP_S4} = V_{VTT_CNTL} = 5 V, no load		150		µA
VIN	PVIN input voltage range		4.5		18	V
UVLO
UVLO	VCC_5V under-voltage lockout	Wake up VCC_5V voltage		4.1	4.5	V
		Shut down VCC_5V voltage	3.3	3.6		V
		Hysteresis VCC_5V voltage		500		mV
VDDQ
V_VDDQSNS	VDDQ sense voltage		1.188	1.2	1.212	V
I_VDDQSNS	VDDQSNS input current	V_VDDQSNS=1.2 V		40		µA
I_VDDQDIS	VDDQ discharge current	V_{SLP_S4} = V_{VTT_CNTL} = 0 V, V_VDDQSNS = 0.5 V		12		mA
t_VDDQSS	VDDQ soft-start time			1.6	2.65	ms
t_VDDQDLY	VDDQ ramp up delay time			2		ms
R_DSONH	High-side switch resistance	T_J = 25°C, V_PVIN = 19V, V_{VCC_5V} = 5V		22		mΩ
R_DSONL	Low-side switch resistance	T_J = 25°C, V_PVIN = 19V, V_{VCC_5V} = 5V		8.6		mΩ
I_VDDQOCL	Low-side valley current limited	V_OUT = 1.2 V, L = 0.68 µH	8.2	9.8	11.5	A
f_sw	VDDQ switching freqency			600		kHz
t_OFF(MIN)	Minimum off time			198		ns
PGOOD (VDDQ, VPP)
V_THPG	PGOOD threshold	VDDQSNS / VPPSNS falling (Fault)		87		%
		VDDQSNS / VPPSNS rising (Good)		93		%
		VDDQSNS / VPPSNS rising (Fault)		115		%
		VDDQSNS / VPPSNS falling (Good)		110		%
I_PGMAX	PG sink current	V_PGOOD =0.5V, V_{SLP_S4} =V_{VTT_CNTL} = 5 V, no load		46		mA
t_PGDLY	PG start-up delay	PG from low to high		1		ms
VPP
V_VPPSNS	VPP sense voltage		2.45	2.5	2.55	V
I_VPPSNS	VPPSNS input current	V_VPPSNS=2.5 V		20		µA
I_VPPDIS	VPP discharge current	V_{SLP_S4} = V_{VTT_CNTL} = 0 V, V_VPPSNS = 0.5 V		12		mA
t_VPPSS	VPP soft-start time			1 .0	2	ms
R_DSONH	High-side switch resistance	T_J = 25°C, V_{PVIN_VPP} = 5V, V_{VCC_5V} = 5V		150		mΩ
R_DSONL	Low-side switch resistance	T_J = 25°C, V_{PVIN_VPP}=5V, V_{VCC_5V} = 5V		120		mΩ
I_VPPOCL	Low-side valley current limited	V_OUT = 2.5 V, L = 4.7 µH	1.05	1.6	2.1	A
f_sw	VPP switching frequency			580		kHz
t_OFF(MIN)	Minimum off time			195		ns
t_OOA	OOA mode operation period	V_VPPSNS=2.5 V		31		µs
OVP AND UVP (VDDQ, VPP)
V_OVP	OVP threshold voltage	OVP detect voltage	120	125	130	%
V_UVP1	UVP threshold voltage	UVP detect voltage	55	60	65	%
t_OVPDLY	OVP delay			20		µs
t_UVPDLY	UVP delay			250		µs
VTTREF OUTPUT
V_VTTREF	Output voltage			1/2* V_VDDQSNS		V
V_VTTREF	Output voltage tolerance to VDDQ	T_J = 25°C, \|I_VTTREF\| ≤100 µA, V_VDDQSNS = 1.2 V	49.2		50.8	%
V_VTTREF	Output voltage tolerance to VDDQ	T_J = 25°C, \|I_VTTREF\| ≤10mA, V_VDDQSNS = 1.2 V	49		51
I_VTTREFOCLSRC	Source current limit	V_VDDQSNS = 1.2 V, V_VTTREF= 0 V	10	18		mA
I_VTTREFOCLSnk	Sink current limit	V_VDDQSNS = 1.2 V, V_VTTREF= 1.2 V	10	18		mA
I_VTTREFDIS	VTTREF discharge current	T_J = 25°C, V_{SLP_S4} = V_{VTT_CNTL} = 0 V, V_VTTREF = 0.5 V	0.8	1.3		mA
VTT OUTPUT
V_VTT	Output voltage			V_VTTREF		V
V_VTTTOL	Output voltage tolerance	\|I_VTT\| ≤10 mA, V_VDDQSNS = 1.2 V, I_VTTREF= 0 A	–20		20	mV
V_VTTTOL	Output voltage tolerance	T_J = 25°C,\|I_VTT\| ≤1A, V_VDDQSNS = 1.2 V, I_VTTREF= 0 A	–30		30	mV
I_VTTOCLSRC	Source current limit	V_VDDQSNS = 1.2 V, V_VTT= V_VTTSNS= 0.5 V, I_VTTREF=0 A	1	1.7		A
I_VTTOCLSnk	Sink current limit	V_VDDQSNS = 1.2 V, V_VTT= V_VTTSNS= 0.7 V, I_VTTREF=0 A	1	1.7		A
I_VTTLK	Leakage current	T_J = 25°C, V_{SLP_S4} = 5 V, V_{VTT_CNTL} = 5 V, V_VTT =V_VTTREF			5	µA
I_VTTSNSBIAS	VTTSNS input bias current	V_{SLP_S4} = 5 V, V_{VTT_CNTL} = 5 V, V_VTT =V_VTTREF	–0.5	0	0.5
I_VTTSNSLK	VTTSNS leakage current	V_{SLP_S4} = 5 V, V_{VTT_CNTL} = 0 V, V_VTT =V_VTTREF	–1	0	1
I_VTTDLY	VTT output delay relative to VTT_CNTL				35	us
I_VTTDIS	VTT discharge current	T_J = 25°C, V_{SLP_S4} = V_{VTT_CNTL} = 0 V, V_VDDQSNS = 1.2 V, V_VTT =0.5V, I_VTTREF =0 A		5.7		mA
SLP_S4, VTT_CNTL LOGIC THRESHOLD
V_IH	SLP_S4/VTT_CNTL high-level voltage		1.6			V
V_IL	SLP_S4/VTT_CNTL low-level voltage				0.5	V
R_TOGND	SLP_S4/VTT_CNTL resistance to GND			500		kΩ
THERMAL PROTECTION
T_OTP	OTP trip threshold			150		°C
T_OTPHSY	OTP hysteresis			20		°C