| SUPPLY |
| VIN |
Input voltage range |
|
2.5 |
|
6 |
V |
| IQ |
Operating quiescent current into IN |
Device not switching, VFB = 1.3 V |
|
75 |
100 |
μA |
| ISDVIN |
Shutdown current into IN |
EN = GND |
|
|
1 |
μA |
| VUVLO |
Undervoltage lockout threshold |
VIN falling |
|
|
2.4 |
V |
|
|
VIN rising |
|
|
2.5 |
V |
| TSD |
Thermal shutdown |
Temperature rising |
|
150 |
|
°C |
| TSDHYS |
Thermal shutdown hysteresis |
|
|
14 |
|
°C |
| LOGIC SIGNALS EN, FREQ |
| VIH |
High-level input voltage |
VIN = 2.5 V to 6.0 V |
2 |
|
|
V |
| Valid only for EN, VIN = 2.5 V to 4.3 V |
1.6 |
|
|
| VIL |
Low-level input voltage |
VIN = 2.5 V to 6.0 V |
|
|
0.5 |
V |
| IINLEAK |
Input leakage current |
EN = FREQ = GND |
|
|
0.1 |
μA |
| BOOST CONVERTER |
| VS |
Boost output voltage |
|
VIN + 0.5 |
|
18.5 |
V |
| VFB |
Feedback regulation voltage |
|
1.230 |
1.238 |
1.246 |
V |
| gm |
Transconductance error amplifier |
|
|
107 |
|
μA/V |
| IFB |
Feedback input bias current |
VFB = 1.238 V |
|
|
0.1 |
μA |
| rDS(on) |
N-channel MOSFET on-resistance |
VIN = VGS = 5 V, ISW = current limit |
|
0.13 |
0.18 |
Ω |
| VIN = VGS = 3V, ISW = current limit |
|
0.16 |
0.23 |
| ISWLEAK |
SW leakage current |
EN = GND, VSW = VIN = 6.0V |
|
|
2 |
μA |
| ILIM |
N-Channel MOSFET current limit |
|
3.2 |
4.0 |
4.8 |
A |
| ISS |
Soft-start current |
VSS = 1.238 V |
7 |
10 |
13 |
μA |
| fS |
Oscillator frequency |
FREQ = VIN |
0.9 |
1.2 |
1.5 |
MHz |
| FREQ = GND |
480 |
650 |
820 |
kHz |
|
Line regulation |
VIN = 2.5 V to 6.0 V, IOUT = 10 mA |
|
0.0002 |
|
%/V |
|
Load regulation |
VIN = 5.0 V, IOUT = 1 mA to 1 A |
|
0.11 |
|
%/A |