ZHCS610D December 2011 – December 2021 TPS28225-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| UNDER VOLTAGE LOCKOUT | ||||||
| Rising threshold | VPWM = 0 V | 3.2 | 3.5 | 3.8 | V | |
| VPWM = 0 V, TA = 25°C | 3.5 | |||||
| Falling threshold | VPWM = 0 V | 2.7 | V | |||
| VPWM = 0 V, TA = 25°C | 3 | |||||
| Hysteresis | TA = 25°C | 0.5 | V | |||
| BIAS CURRENTS | ||||||
| IDD(off) | Bias supply current | VEN/PG = low, PWM pin floating, TA = 25°C |
350 | μA | ||
| IDD | Bias supply current | VEN/PG = high, PWM pin floating, TA = 25°C |
500 | μA | ||
| INPUT (PWM) | ||||||
| IPWM | Input current | VPWM = 5 V, TA = 25°C | 185 | μA | ||
| VPWM = 0 V, TA = 25°C | –200 | μA | ||||
| PWM 3-state rising threshold(2) | TA = 25°C | 1 | V | |||
| PWM 3-state falling threshold | VPWM PEAK = 5 V | 3.4 | 4 | V | ||
| VPWM PEAK = 5 V, TA = 25°C | 3.8 | |||||
| tHLD_R | 3-state shutdown hold-off time | TA = 25°C | 250 | ns | ||
| TMIN | PWM minimum pulse to force UGATE pulse | CL = 3 nF at UGATE, VPWM = 5 V | 30 | ns | ||
| ENABLE/POWER GOOD (EN/PG) | ||||||
| Enable high rising threshold | PG FET OFF | 2.1 | V | |||
| PG FET OFF, TA = 25°C | 1.7 | |||||
| Enable low falling threshold | PG FET OFF | 0.8 | V | |||
| PG FET OFF, TA = 25°C | 1 | |||||
| Hysteresis | TA = 25°C | 0.35 | V | |||
| 0.7 | ||||||
| Power good output | VDD = 2.5 V | 0.2 | V | |||
| UPPER GATE DRIVER OUTPUT (UGATE) | ||||||
| Source resistance | 500-mA source current | 2 | Ω | |||
| 500-mA source current, TA = 25°C | 1 | |||||
| Source current(2) | VUGATE-PHASE = 2.5 V, TA = 25°C | 2 | A | |||
| tRU | Rise time | CL = 3 nF, TA = 25°C | 10 | ns | ||
| Sink resistance | 500-mA sink current | 2 | Ω | |||
| 500-mA sink current, TA = 25°C | 1 | |||||
| Sink current(2) | VUGATE-PHASE = 2.5 V, TA = 25°C | 2 | A | |||
| tFU | Fall time | CL = 3 nF, TA = 25°C | 10 | ns | ||
| LOWER GATE DRIVER OUTPUT (LGATE) | ||||||
| Source resistance | 500-mA source current | 2 | Ω | |||
| 500-mA source current, TA = 25°C | 1 | |||||
| Source current(2) | VLGATE = 2.5 V, TA = 25°C | 2 | A | |||
| tRL | Rise time(2) | CL = 3 nF, TA = 25°C | 10 | ns | ||
| Sink resistance | 500-mA sink current | 1 | Ω | |||
| 500-mA sink current, TA = 25°C | 0.4 | |||||
| Sink current(2) | VLGATE = 2.5 V, TA = 25°C | 4 | A | |||
| Fall time(2) | CL = 3 nF, TA = 25°C | 5 | ns | |||
| BOOTSTRAP DIODE | ||||||
| VF | Forward voltage | Forward bias
current 100 mA, TA = 25°C |
1 | V | ||
| THERMAL SHUTDOWN | ||||||
| Rising threshold(2) | 150 | 170 | °C | |||
| TA = 25°C | 160 | |||||
| Falling threshold(2) | 130 | 150 | °C | |||
| TA = 25°C | 140 | |||||
| Hysteresis | TA = 25°C | 20 | °C | |||