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TPS28226

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具有 8V UVLO、用于同步整流的 4A、27V 半橋柵極驅(qū)動器

產(chǎn)品詳情

Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 6.8 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (μs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 6.8 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (μs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
SOIC (D) 8 29.4 mm2 4.9 x 6 VSON (DRB) 8 9 mm2 3 x 3
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 ?) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 ?) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-? impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-? impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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類型 標(biāo)題 下載最新的英語版本 日期
* 數(shù)據(jù)表 TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 數(shù)據(jù)表 (Rev. A) PDF | HTML 2014年 11月 26日
應(yīng)用簡報 了解峰值源電流和灌電流 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
應(yīng)用簡報 適用于柵極驅(qū)動器的外部柵極電阻器設(shè)計指南 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
更多文獻(xiàn)資料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
選擇指南 電源管理指南 2018 (Rev. K) 2018年 7月 31日
選擇指南 電源管理指南 2018 (Rev. R) 2018年 6月 25日
更多文獻(xiàn)資料 MOSFET 和 IGBT 柵極驅(qū)動器電路的基本原理 最新英語版本 (Rev.A) 2018年 4月 17日
更多文獻(xiàn)資料 Power Loss Calculation for Sync Buck Converter 2007年 2月 14日

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  • MSL 等級/回流焊峰值溫度
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  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測
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