SLUS791A July 2007 – September 2015 TPS28226
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DRB|8
訂購(gòu)信息
1 Features
- Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
- Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
- Wide Power System Train Input Voltage: 3 V Up to 27 V
- Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
- Capable to Drive MOSFETs with ≥40-A Current per Phase
- High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
- Capable to Propagate <30-ns Input PWM Pulses
- Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
- 3-State PWM Input for Power Stage Shutdown
- Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
- Thermal Shutdown
- UVLO Protection
- Internal Bootstrap Diode
- Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
- High Performance Replacement for Popular 3-State Input Drivers
2 Applications
- Multi-Phase DC-to-DC Converters with Analog or Digital Control
- Desktop and Server VRMs and EVRDs
- Portable and Notebook Regulators
- Synchronous Rectification for Isolated Power Supplies
3 Description
The TPS28226 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28226 is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| TPS28226 | SOIC (8) | 4.90 mm × 3.91 mm |
| VSON (8) | 3.00 mm x 3.00 mm |
- For all available packages, see the orderable addendum at the end of the data sheet.
Simplified Schematic
