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LM5105

正在供貨

具有 8V UVLO 和可編程死區(qū)時(shí)間的 1.8、1.6A、100V 半橋柵極驅(qū)動(dòng)器

產(chǎn)品詳情

Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (μs) 0.026 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
Bootstrap supply voltage (max) (V) 100 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (μs) 0.026 Rise time (ns) 10 Fall time (ns) 10 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm2 4 x 4
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.
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LM5101A 正在供貨 具有 8V UVLO 和 TTL 輸入的 3A、100V 半橋柵極驅(qū)動(dòng)器 This product has higher, 3-A drive current for faster FET rise and fall times with TTL inputs.
LM5102 正在供貨 具有 8V UVLO 和可編程延遲的 2A、100V 半橋柵極驅(qū)動(dòng)器 This product has adds separate high and low-side programmable delay for enhanced timing configuration.
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類(lèi)型 標(biāo)題 下載最新的英語(yǔ)版本 日期
* 數(shù)據(jù)表 LM5105 100-V Half-Bridge Gate Driver With Programmable Dead Time 數(shù)據(jù)表 (Rev. E) PDF | HTML 2016年 8月 25日
應(yīng)用手冊(cè) 柵極驅(qū)動(dòng)器單輸入、死區(qū)時(shí)間和集成二極管特性的優(yōu)勢(shì) PDF | HTML 英語(yǔ)版 PDF | HTML 2025年 5月 5日
應(yīng)用手冊(cè) Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020年 5月 12日
應(yīng)用簡(jiǎn)報(bào) 了解峰值源電流和灌電流 (Rev. A) 英語(yǔ)版 (Rev.A) 2020年 4月 29日
應(yīng)用簡(jiǎn)報(bào) 適用于柵極驅(qū)動(dòng)器的外部柵極電阻器設(shè)計(jì)指南 (Rev. A) 英語(yǔ)版 (Rev.A) 2020年 4月 29日
應(yīng)用簡(jiǎn)報(bào) Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019年 10月 22日
白皮書(shū) Power Electronics in Motor Drives: Where is it? (Rev. A) 2019年 10月 1日
應(yīng)用手冊(cè) UCC27282 Improving motor drive system robustness 2019年 1月 11日
更多文獻(xiàn)資料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文獻(xiàn)資料 MOSFET 和 IGBT 柵極驅(qū)動(dòng)器電路的基本原理 最新英語(yǔ)版本 (Rev.A) 2018年 4月 17日

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仿真模型

LM5105 PSpice Transient Model (Rev. A)

SNVM166A.ZIP (49 KB) - PSpice Model
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仿真模型

LM5105 TINA-TI Transient Reference Design

SNVM361.TSC (576 KB) - TINA-TI Reference Design
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仿真模型

LM5105 TINA-TI Transient Spice Model

SNVM362.ZIP (11 KB) - TINA-TI Spice Model
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仿真模型

LM5105 Unencrypted PSpice Transient Model

SNVMAC7.ZIP (2 KB) - PSpice Model
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