12 Revision History
Changes from Revision J (September 2018) to Revision K (November 2023)
- Changed ESD HBM value from 4000 V to 2000 V in ESD
RatingsGo
- Changed input threshold voltage values, deleted VOH
output high level and VOL output low level, changed output resistance
high and output resistance low values in Electrical
CharacteristicsGo
- Changed Figure 6-4
Go
Changes from Revision I (July 2016) to Revision J (September 2018)
- Changed NC description from "No connection: must be grounded” to “No
Internal Connection".Go
Changes from Revision H (May 2013) to Revision I (July 2016)
- 新增了 ESD 等級(jí) 表、特性說(shuō)明 部分、器件功能模式、應(yīng)用和實(shí)現(xiàn) 部分、電源相關(guān)建議 部分、布局 部分、器件和文檔支持 部分以及機(jī)械、封裝和可訂購(gòu)信息 部分Go
- Deleted Power Dissipation rows from Absolute Maximum Ratings
Go
Changes from Revision G (March 2010) to Revision H (May 2013)
- Changed updated text o to current standards for global authoring - identified ambiguous pronouns, changed future/passive tense with active, edited for spelling/grammar/sentence sense. Go
- Changed DSCHOTTKY diode direction and voltage of zener diode from 5.5 to 4.5 V in Figure 8-3
Go
- Added three paragraphs after first paragraph of Operational Waveforms and Circuit Layout section before Figure 8-5
Go