11 Revision History

Changes from Revision B (March 2016) to Revision C (July 2024)

• 更改了文檔標(biāo)題以反映器件的主要特性。對若干規(guī)格進(jìn)行了小幅更新以反映器件特性。Go
• 更新了“特性”部分：1) 刪除了 HBM 和 CDM ESD 分類等級，以遵循最新的 TI 數(shù)據(jù)表標(biāo)準(zhǔn)。2) 將結(jié)溫范圍從“-40°C 至 140°C”更改為“-40°C 至 150°C”。3) 刪除了 DMK 封裝，因?yàn)樵撈骷淹．a(chǎn)。4) 將典型傳播延遲從 20ns 更改為 22ns。5) 刪除了“工作頻率大于 1MHz”，因?yàn)殚_關(guān)頻率不是指定的參數(shù)。6) 將典型自舉二極管電阻從 0.6Ω 更改為 0.65ΩGo
• 更新了“應(yīng)用”部分，添加了 5 大典型應(yīng)用列表。Go
• 更新了“說明”部分：1) 刪除了與 UCC27200 和 UCC27201 產(chǎn)品的比較。2) 澄清了 -18V HS 容差是絕對最大值規(guī)格。3) 刪除了對 DMK 封裝的引用。Go
• Updated Pin Configuration and Functions Functions section - deleted 10-pin VSON DMK package information and updated PowerPAD description.Go
• Updated Absolute Maximum Ratings section to remove "Power dissipation at TA = 25°C" and "Lead temperature (soldering, 10s)". Power dissipation can be calculated with thermal metrics in "Thermal Information" table.Go
• Updated Recommended Operating Conditions: Operating Junction Temperature maximum changed from 140°C to 150°C.Go
• Updated Thermal Information section to reflect device characteristics. Go
• Updated Supply Currents specifications in the Electrical Characteristics table: 1) I_DD typical changed (From: 0.4mA. To: 0.11mA). 2) I_DDO typical changed (From: 3.8mA. To: 1mA). 3) I_DDO maximum changed (From: 5.5mA. To: 3mA. 4) I_HB typical changed (From: 0.4mA. To: 0.065mA). 5) I_HBO typical changed (From: 2.5mA. To: 0.9mA). 6) I_HBO maximum changed (From: 4mA. To: 3mA). 7) I_HBS test condition changed to match V_HS maximum recommended operating conditions (From: 110V. To: 105V). 8) I_HBSO typical changed (From: 0.1mA. To: 0.03mA).Go
• Updated Input specifications in the Electrical Characteristics table: 1) V_HIT specifications changed (From: 1.7V typical, 2.5V maximum. To: 1.9V minimum, 2.3V typical, 2.7V maximum). 2) V_LIT specifications changed (From: 0.8V minimum, 1.6V typical. To: 1.3V minimum, 1.6V typical, 1.9V maximum). 3) V_IHYS typical changed (From: 100mV. To: 700mV). 4) R_IN specifications changed from (100kΩ minimum, 200kΩ typical, 350kΩ maximum. To: 68kΩ typical). Go
• Updated Bootstrap diode specifications in the Electrical Characteristics table: 1) R_D test conditions changed (From: 100mA and 80mA. To: 120mA and 100mA). 2) R_D typical changed (From: 0.6Ω. To: 0.65Ω). Updated LO/HO Gate Driver specifications in the Electrical Characteristics table: 1) V_LOL typical changed (From 0.18V. To 0.1V). 2) V_LOH typical changed (From: 0.25V. To: 0.13V). Go
• Removed specifications with test conditions "-40°C to 125°C T_J", since all parameters are specified from -40°C to 150°C T_J (unless otherwise noted). Go
• Changed Propagation Delays typical specification (From: 20ns. To: 22ns).Go
• Updated Output Rise and Fall Time specifications: 1) t_R typical changed (From: 0.35us. To: 0.26us). 2) t_F typical changed (From: 0.3us. To: 0.22us). Go
• Updated timing diagramsGo
• Updated all plots in Typical Characteristics section to reflect the device's typical specification. Go
• Updated Input Stages section to match the input typical specification in the electrical characteristics table - changed 200k? pull-down resistance, 1.7V input rising threshold to 8k? pull-down resistance, 2.3V input rising threshold. Go
• Updated Typical Application section to display a different application diagram, updated Design Requirements section, and updated Detailed Design procedure section since information in previous revision of data sheet had an outdated circuit with obsolete part numbers. Go
• Changed application curves to display propagation delay and rise/fall time plots. Go
• Changed Power Supply Recommendations section to correctly describe that LO is sourced from VDD and HO is souced from HB. Go