ZHCSIT9C November 2018 – February 2024 TMUX1104
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Pin Configuration and Functions
-
5 Specifications
- 5.1 Absolute Maximum Ratings
- 5.2 ESD Ratings
- 5.3 Recommended Operating Conditions
- 5.4 Thermal Information
- 5.5 Electrical Characteristics (VDD = 5V ±10 %)
- 5.6 Electrical Characteristics (VDD = 3.3V ±10 %)
- 5.7 Electrical Characteristics (VDD = 1.8V ±10 %)
- 5.8 Electrical Characteristics (VDD = 1.2V ±10 %)
- 5.9 Typical Characteristics
- 6 Parameter Measurement Information
- 7 Detailed Description
- 8 Application and Implementation
- 9 Device and Documentation Support
- 10Revision History
- 11Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DGS|10
- DQA|10
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DQA|10
訂購信息
7.2.6 Ultra-low Charge Injection
The TMUX1104 has a transmission gate topology, as shown in Figure 7-3. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.
Figure 7-3 Transmission Gate TopologyThe TMUX1104 has special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to 1.5pC at VS = 1V as shown in Figure 7-4.
Figure 7-4 Charge Injection vs Source Voltage