9 Revision History
Changes from Revision I (July 2019) to Revision J (November 2023)
- 將特性 中的 ESD 保護規(guī)格從 MIL-STD-883C 方法 3015.2 規(guī)定的 2000V 更改為 ANSI/ESDA/JEDEC JS-001 規(guī)定的 1000VGo
- 將說明 部分中的器件信息 表更改為封裝信息，并將封裝尺寸（標稱值）更改為封裝尺寸
Go
- Added ESD Ratings table and HBM, CDM, and MM specifications.Go
- Changed thermal resistance and characterization parameter values for
SOIC and PDIP packages in Thermal Information table.Go
- Changed reset current (IRESET) test conditions to
VRESET = VDD, in Electrical Characteristics:
VDD = 5 V and Electrical Characteristics:
VDD = 15 V
Go
- Added new reset current (IRESET) typical specification,
for test condition VRESET = 0 V, to Electrical Characteristics:
VDD = 5 V and Electrical Characteristics:
VDD = 15 V
Go
- Changed supply current (IDD) typical value from 170 μA to
180 μA in Electrical Characteristics: VDD = 5
V
Go
- Changed title of Operating Characteristics section to
Timing Characteristics and clarified that values are specified by
design or characterization.Go
- Deleted Initial error of timing interval specification in Timing
Characteristics
Go
- Added Figure 5-4, Supply Current vs Supply Voltage, Unit
2
Go
- Changed Figure 5-3, Supply Current vs Supply Voltage, to add
"Unit 1" to title, and deleted 0°C and 70°C curvesGo
- Changed functional block diagram to simplified schematic and moved
to Overview
Go
- Updated Functional Block Diagram
Go
- Added guidance for RESET pin pullup resistance and CONT pin voltage range to
Monostable Operation
Go
- Added clarity regarding nominal operating frequency and parasitic
terms in Astable Operation
Go
- Deleted link to deprecated TLC555 Design Calculator in Astable
Operation
Go
- Deleted Figure 17, Equivalent Schematic, and added guidance
concerning the RESET pin in Device Functional Modes
Go
Changes from Revision H (August 2016) to Revision I (July 2019)
- Added MIN value for input voltage in Absolute Maximum Ratings
Go
- Added discharge pin in Absolute Maximum Ratings
Go
- Changed MIN supply voltage based on part number in Recommended Operating Conditions
Go
- Added power dissipation capacitance TYP value in Electrical
Characteristics: VDD = 2 V for TLC555C, VDD = 3 V for
TLC555I
Go
- Added trigger, threshold capacitance TYP value in Electrical
Characteristics: VDD = 5 V
Go
- Changed VOH test condition current to –1 mA in
Electrical Characteristics: VDD = 5 V
Go
- Added power dissipation capacitance TYP value in Electrical
Characteristics: VDD = 5 V
Go
- Added trigger, threshold capacitance TYP value in Electrical
Characteristics: VDD = 15 V
Go
- Added power dissipation capacitance TYP value in Electrical
Characteristics: VDD = 15 V
Go
- Added Operating Characteristics to the Specifications
sectionGo
- Added Supply Current vs Supply Voltage chart to the Typical Characteristics sectionGo
- Added Control Impedance vs Temperature chart to the Typical Characteristics sectionGo
- Added Output Low Resistance vs Temperature chart to the Typical Characteristics sectionGo
- Added Output High Resistance vs Temperature chart to the Typical Characteristics sectionGo
- Added Propagation Delay vs Control Voltage chart, VDD = 2 V to the Typical Characteristics sectionGo
- Added Propagation Delay vs Control Voltage chart, VDD = 5 V to the Typical Characteristics sectionGo
- Changed trigger high hold time to 1 μs in Monostable
Operation
Go
- Changed minimum monostable pulse width to 1 μs in Monostable
Operation
Go
- Changed Output Pulse Duration vs Capacitance chart scale down to 0.001 ms in
Monostable Operation
Go
- Added more astable frequency formulas to the Astable
Operation sectionGo
- Changed scale on Free-Running Frequency vs Timing Capacitance chart
up to 2 MHz in the Astable Operation sectionGo
- Added CONT pin table note to the Table 6-1, Function Table in
the Device Functional Modes
Go
- Changed the application curve chart in the Pulse-Width Modulation sectionGo
- Changed the application curve charts in the Pulse-Position Modulation sectionGo
- Added clamping diodes to Sequential Timer Circuit in the
Sequential Timer sectionGo
- Added Designing for Improved
ESD Performance section to the Application
Information sectionGo
Changes from Revision G (November 2008) to Revision H (August 2016)
- 添加了特性說明 部分、器件功能模式、應用和實現(xiàn) 部分、電源相關(guān)建議 部分、布局 部分、器件和文檔支持 部分以及機械、封裝和可訂購信息 部分Go
- Changed values in the Thermal Information table to align with
JEDEC standards.Go
- Deleted Dissipation Ratings table Go