ZHCSPQ3A december 2022 – april 2023 MCF8315A
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Output Stage
- 7.3.2 Device Interface
- 7.3.3 Step-Down Mixed-Mode Buck Regulator
- 7.3.4 AVDD Linear Voltage Regulator
- 7.3.5 Charge Pump
- 7.3.6 Slew Rate Control
- 7.3.7 Cross Conduction (Dead Time)
- 7.3.8 Speed Control
- 7.3.9 Starting the Motor Under Different Initial Conditions
- 7.3.10 Motor Start Sequence (MSS)
- 7.3.11 Closed Loop Operation
- 7.3.12 Motor Parameters
- 7.3.13 Motor Parameter Extraction Tool (MPET)
- 7.3.14 Anti-Voltage Surge (AVS)
- 7.3.15 Output PWM Switching Frequency
- 7.3.16 Active Braking
- 7.3.17 PWM Modulation Schemes
- 7.3.18 Dead Time Compensation
- 7.3.19 Motor Stop Options
- 7.3.20 FG Configuration
- 7.3.21 DC Bus Current Limit
- 7.3.22
Protections
- 7.3.22.1 VM Supply Undervoltage Lockout
- 7.3.22.2 AVDD Undervoltage Lockout (AVDD_UV)
- 7.3.22.3 BUCK Undervoltage Lockout (BUCK_UV)
- 7.3.22.4 VCP Charge Pump Undervoltage Lockout (CPUV)
- 7.3.22.5 Overvoltage Protection (OVP)
- 7.3.22.6 Overcurrent Protection (OCP)
- 7.3.22.7 Buck Overcurrent Protection
- 7.3.22.8 Hardware Lock Detection Current Limit (HW_LOCK_ILIMIT)
- 7.3.22.9 Thermal Warning (OTW)
- 7.3.22.10 Thermal Shutdown (TSD)
- 7.3.22.11 Motor Lock (MTR_LCK)
- 7.3.22.12 Motor Lock Detection
- 7.3.22.13 MPET Faults
- 7.3.22.14 IPD Faults
- 7.4 Device Functional Modes
- 7.5 External Interface
- 7.6 EEPROM access and I2C interface
- 7.7 EEPROM (Non-Volatile) Register Map
- 7.8 RAM (Volatile) Register Map
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGF|40
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGF|40
訂購(gòu)信息
7.3.7 Cross Conduction (Dead Time)
The device is fully protected against any cross conduction of MOSFETs - during the switching of high-side and low-side MOSFETs, MCF8315A avoids shoot-through events by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that VGS of high-side MOSFET has dropped below turn-off level before switching on the low-side MOSFET of same half-bridge (or vice-versa) as shown in Figure 7-11and Figure 7-12. The VGS of the high-side and low-side MOSFETs (VGS_HS and VGS_LS) shown in Figure 7-12 are internal signals.
Figure 7-11 Cross Conduction
Protection
Figure 7-12 Dead Time