波多野结衣 rmvb,国产又爽又粗又猛又色又,国产又色又爽无遮挡免费

SNVSB95 July 2019 LM3421-Q1 , LM3423-Q1

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

PWP|20
- MHTS001H

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

PWP|20
- PPTD289A

訂購信息

7.5 Electrical Characteristics

V_IN = 14, −40°C ≤ T_J ≤ 150°C unless otherwise specified. Minimum and maximum limits are specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
START-UP REGULATOR
V_CCREG	V_CC regulation	I_CC = 0 mA		6.3		7.35	V
V_CCREG	V_CC regulation	I_CC = 0 mA, T_A = 25°C			6.9		V
I_CCLIM	V_CC current limit	V_CC = 0 V		20			mA
I_CCLIM	V_CC current limit	V_CC = 0 V, T_A = 25°C			25		mA
I_Q	Quiescent current	V_EN = 3 V, Static	LM3421-Q1, LM3423-Q1			3
		V_EN = 3 V, Static	LM3421-Q0, LM3423-Q0			3.5	mA
		V_EN = 3 V, Static, −40°C ≤ T_J ≤ 125°C			2
I_SD	Shutdown current	V_EN = 0 V				1	µA
I_SD	Shutdown current	V_EN = 0 V, T_A = 25°C			0.1		µA
V_CC SUPPLY
V_CCUV	V_CC UVLO Threshold	V_CC Increasing				4.5	V
		V_CC Increasing, T_A = 25°C			4.17
		V_CC Decreasing		3.7
		V_CC Decreasing, T_A = 25°C			4.08
V_CCHYS	V_CC UVLO Hysteresis	T_A = 25°C			0.1		V
ENABLE THRESHOLDS
EN_ST	EN start-up threshold	V_EN Increasing	LM3421-Q1, LM3423-Q1			2.4	V
		V_EN Increasing	LM3421-Q0, LM3423-Q0			2.75	V
		V_EN Increasing, T_A = 25°C			1.75
EN_ST	EN start-up threshold	V_EN Decreasing		0.8			V
EN_ST	EN start-up threshold	V_EN Decreasing, T_A = 25°C			1.63		V
EN_STHYS	EN start-up hysteresis	T_A = 25°C			0.1		V
R_EN	EN pulldown resistance	V_EN = 1 V	LM3421-Q1, LM3423-Q1	0.245		2.85	MΩ
		V_EN = 1 V	LM3421-Q0, LM3423-Q0	0.245		3.15
		V_EN = 1 V, T_A = 25°C			0.82
CSH THRESHOLDS
	CSH high fault	CSH Increasing, T_A = 25°C			1.6		V
	CSH low condition on LRDY Pin	CSH increasing, T_A = 25°C	LM3423-Q1, LM3423-Q0		1		V
OV THRESHOLDS
OVP_CB	OVP OVLO threshold	OVP Increasing		1.185		1.285	V
OVP_CB	OVP OVLO threshold	OVP Increasing, T_A = 25°C			1.24		V
OVP_HYS	OVP hysteresis source current	OVP Active (high)	LM3421-Q1, LM3423-Q1	20		25	µA
		OVP Active (high)	LM3421-Q0, LM3423-Q0	20		26
		OVP Active (high), T_A = 25°C			23
DPOL THRESHOLDS
DPOL_THRSH	DPOL logic threshold	DPOL Increasing		2		2.6	V
DPOL_THRSH	DPOL logic threshold	DPOL Increasing, T_A = 25°C			2.3		V
R_DPOL	DPOL pullup resistance					1200	kΩ
R_DPOL	DPOL pullup resistance	T_A = 25°C			500		kΩ
FAULT TIMER
V_FLTTH	Fault threshold		LM3421-Q1, LM3423-Q1	1.185		1.285	V
			LM3421-Q0, LM3423-Q0	1.185		1.29	V
		T_A = 25°C			1.24
I_FLT	FAULT pin source current		LM3421-Q1, LM3423-Q1	10		13	µA
			LM3421-Q0, LM3423-Q0	10		13.5
		T_A = 25°C			11.5
ERROR AMPLIFIER
V_REF	CSH reference voltage	w/r/t to AGND		1.21		1.26	V
V_REF	CSH reference voltage	w/r/t to AGND, T_J = 25°C			1.235		V
	Error amplifier input bias current	T_J = 25°C		–0.6	0	0.6	µA
	COMP sink or source current		LM3421-Q1, LM3423-Q1	22		35	µA
			LM3421-Q0, LM3423-Q0	22		36
		T_J = 25°C			30
	Transconductance	T_J = 25°C			100		µA/V
	Linear input range	⁽¹⁾, T_J = 25°C			±125		mV
	Transconductance bandwidth	–6dB Unloaded Response ⁽¹⁾, MIN = T_J = 25°C		0.5	1		MHz
OFF TIMER
t_OFF(min)	Minimum OFF-time	RCT = 1 V through 1 kΩ	LM3421-Q1, LM3423-Q1			75	ns
		RCT = 1 V through 1 kΩ	LM3421-Q0, LM3423-Q0			90
		RCT = 1 V through 1 kΩ, T_J = 25°C			35
R_RCT	RCT reset pulldown resistance		LM3421-Q1, LM3423-Q1			120	Ω
			LM3421-Q0, LM3423-Q0			125	Ω
		T_J = 25°C			36
V_RCT	V_IN/25 reference voltage	V_IN = 14 V	LM3421-Q1, LM3423-Q1	540		585	mV
		V_IN = 14 V	LM3421-Q0, LM3423-Q0	540		590
		V_IN = 14 V, T_J = 25°C			565
f	Continuous conduction switching frequency	2.2 nF > C_T > 470 pF, T_J = 25°C			(See ⁽²⁾)		Hz
PWM COMPARATOR
	COMP-to-PWM offset voltage			700		900	mV
	COMP-to-PWM offset voltage	T_J = 25°C			800		mV
CURRENT LIMIT (IS)
I_LIM	Current limit threshold			215		275	mV
I_LIM	Current limit threshold	T_J = 25°C			245		mV
	Current limit delay-to-output		LM3421-Q1, LM3423-Q1			75	ns
			LM3421-Q0, LM3423-Q0			90
		T_J = 25°C			35
t_LEB	Leading edge blanking (LEB) time			115		325	ns
t_LEB	Leading edge blanking (LEB) time	T_J = 25°C			210		ns
HIGH SIDE TRANSCONDUCTANCE AMPLIFIER
	Input bias current	T_J = 25°C			11.5		µA
g_M	Transconductance			20			mA/V
g_M	Transconductance	T_J = 25°C			119		mA/V
	Input offset current			–1.5		1.5	µA
	Input offset current	T_J = 25°C			0		µA
	Input offset voltage			–7		7	mV
	Input offset voltage	T_J = 25°C			0		mV
g_M(BW)	Transconductance bandwidth	I_CSH = 100 µA⁽¹⁾, T_J = 25°C		250	500		kHz
GATE DRIVER (GATE)
R_SRC(GATE)	GATE sourcing resistance	GATE = High				6	Ω
R_SRC(GATE)	GATE sourcing resistance	GATE = High, T_J = 25°C			2		Ω
R_SNK(GATE)	GATE sinking resistance	GATE = Low				4.5	Ω
R_SNK(GATE)	GATE sinking resistance	GATE = Low, T_J = 25°C			1.3		Ω
DIM DRIVER (DIM, DDRV)
nDIM_VTH	nDIM / UVLO threshold			1.185		1.285	V
nDIM_VTH	nDIM / UVLO threshold	T_J = 25°C			1.24		V
nDIM_HYS	nDIM hysteresis current		LM3421-Q1, LM3423-Q1	20		25	µA
			LM3421-Q0, LM3423-Q0	20		26
		T_J = 25°C			23
R_SRC(DDRV)	DDRV sourcing resistance	DDRV = High				30	Ω
R_SRC(DDRV)	DDRV sourcing resistance	DDRV = High, T_J = 25°C			13.5		Ω
R_SNK(DDRV)	DDRV sinking resistance	DDRV = Low				10	Ω
R_SNK(DDRV)	DDRV sinking resistance	DDRV = Low, T_J = 25°C			3.5		Ω
PULLDOWN N-CHANNEL MOSFETS
R_RPD	RPD pulldown resistance		LM3421-Q1, LM3423-Q1			300	Ω
			LM3421-Q0, LM3423-Q0			350
		T_J = 25°C			145
R_FLT	FLT pulldown resistance		LM3421-Q1, LM3423-Q1			300	Ω
			LM3421-Q0, LM3423-Q0			350
		T_J = 25°C			145
R_LRDY	LRDY pulldown resistance		LM3421-Q1, LM3423-Q1			300	Ω
			LM3421-Q0, LM3423-Q0			350
		T_J = 25°C			135
THERMAL SHUTDOWN
T_SD	Thermal shutdown threshold⁽¹⁾	T_J = 25°C			165		°C
T_SD	Thermal shutdown threshold⁽¹⁾	T_J = 25°C	LM3421-Q1, LM3423-Q1		165		°C
T_SD	Thermal shutdown threshold⁽¹⁾	T_J = 25°C	LM3421-Q0, LM3423-Q0		210		°C
T_HYS	Thermal shutdown hysteresis⁽¹⁾	T_J = 25°C			25		°C

(1) Specified by design. Not production tested.

(2) f = 25/(C_T × R_T