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ZHCSN08D August 2020 – April 2024 DRV8714-Q1 , DRV8718-Q1

PRODMIX

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PHP|48
- MPQF051B
RVJ|56
- MPQF275D
RHA|40
- MPQF135D

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

PHP|48
- PPTD259B
RVJ|56
- QFND385A
RHA|40
- QFND690

訂購信息

6.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Driver power supply pin voltage	PVDD	–0.3	40	V
MOSFET drain sense pin voltage	DRAIN	–0.3	40	V
Voltage difference between ground pins	AGND, DGND, GND	–0.3	0.3	V
Charge pump pin voltage	VCP	–0.3	55	V
Charge pump high-side pin voltage	CP1H	V_PVDD – 0.3	V_VCP + 0.3	V
Charge pump high-side pin voltage	CP2H	V_PVDD – 0.6	V_VCP + 0.3	V
Charge pump low-side pin voltage	CP1L, CP2L	–0.3	V_PVDD + 0.3	V
Digital power supply pin voltage	DVDD	–0.3	5.75	V
Logic pin voltage	DRVOFF/nFLT, GAIN, IDRIVE, INx/ENx, INx/PHx, MODE, nSLEEP, nSCS, SCLK, SDI, VDS	–0.3	5.75	V
Output logic pin voltage	DRVOFF/nFLT, SDO	–0.3	V_DVDD + 0.3	V
Brake pin voltage	BRAKE	–0.3	V_PVDD + 0.3	V
High-side gate drive pin voltage	GHx⁽²⁾	–2	V_VCP + 0.3	V
Transient 1-μs high-side gate drive pin voltage		–5	V_VCP + 0.3
High-side gate drive pin voltage with respect to SHx		–0.3	13.5
High-side sense pin voltage	SHx⁽²⁾	–2	40	V
Transient 1-μs high-side sense pin voltage	SHx⁽²⁾	–5	40	V
Low-side gate drive pin voltage	GLx⁽²⁾	–2	13.5	V
Transient 1-μs low-side gate drive pin voltage		–3	13.5
Low-side gate drive pin voltage with respect to PGNDx		–0.3	13.5
Low-side sense pin voltage	PGNDx⁽²⁾	–2	2	V
Transient 1-μs low-side sense pin voltage	PGNDx⁽²⁾	–3	3	V
Peak gate drive current	GHx, GLx	Internally Limited	Internally Limited	mA
Amplfier power supply and reference pin voltage	AREF	–0.3	5.75	V
Amplifier input pin voltage	SNx, SPx	–2	V_VCP + 0.3	V
Transient 1-μs amplifier input pin voltage	SNx, SPx	–5	V_VCP + 0.3	V
Amplifier input differential voltage	SNx, SPx	–5.75	5.75	V
Amplifier output pin voltage	SOx	–0.3	V_AREF + 0.3	V
Ambient temperature, T_A		–40	125	°C
Junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) PVDD and DRAIN with respect to GHx, SHx, GLx, or PGNDx should not exceed 40-V. When PVDD or DRAIN are greater than 35-V, negative voltage on GHx, SHx, GLx, and PGNDx should be limited to ensure this rating is not exceeded. When PVDD and DRAIN are less than 35-V, the full negative voltage rating of GHx, SHx, GLx, and PGNDx is available.