ZHCSGI4B August 2017 – February 2022 CSD22205L
PRODUCTION DATA
- 1特性
- 2應(yīng)用
- 3說明
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機械數(shù)據(jù) (封裝 | 引腳)
- YMG|4
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 5-1 Saturation Characteristics
Figure 5-3 Maximum Drain Current vs Temperature
Figure 5-5 Capacitance
Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
Figure 5-9 Typical Diode Forward Voltage
Figure 5-11 Transient Thermal Impedance
| VDS = –5 V |
| ID = –1 A | VDS = –4 V |
| ID = –250 μA |
| ID = –1 A |
| Single pulse, typical RθJA = 225°C/W |