SN74ABT843

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具有三態(tài)輸出的 9 位總線接口 D 類鎖存器

產(chǎn)品詳情

Number of channels 9 Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Input type TTL-Compatible CMOS Output type 3-State Clock frequency (max) (MHz) 150 IOL (max) (mA) 64 IOH (max) (mA) -32 Supply current (max) (μA) 34000 Features Flow-through pinout, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Operating temperature range (°C) -40 to 85 Rating Catalog
Number of channels 9 Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Input type TTL-Compatible CMOS Output type 3-State Clock frequency (max) (MHz) 150 IOL (max) (mA) 64 IOH (max) (mA) -32 Supply current (max) (μA) 34000 Features Flow-through pinout, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Operating temperature range (°C) -40 to 85 Rating Catalog
SOIC (DW) 24 159.65 mm2 15.5 x 10.3 SSOP (DB) 24 63.96 mm2 8.2 x 7.8
  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW) and Shrink Small-Outline (DB) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (NT) and Ceramic (JT) DIPs

    EPIC-IIB is a trademark of Texas Instruments Incorporated.
  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW) and Shrink Small-Outline (DB) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (NT) and Ceramic (JT) DIPs

    EPIC-IIB is a trademark of Texas Instruments Incorporated.

The 'ABT843 9-bit latches are designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The nine transparent D-type latches provide true data at the outputs.

A buffered output-enable (OE\) input can be used to place the nine outputs in either a normal logic state (high or low logic levels) or a high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the latch. Previously stored data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT843 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT843 is characterized for operation from -40°C to 85°C.

The 'ABT843 9-bit latches are designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The nine transparent D-type latches provide true data at the outputs.

A buffered output-enable (OE\) input can be used to place the nine outputs in either a normal logic state (high or low logic levels) or a high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the latch. Previously stored data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT843 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT843 is characterized for operation from -40°C to 85°C.

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類型 標題 下載最新的英語版本 日期
* 數(shù)據(jù)表 9-Bit Bus-Interface D-Type Latches With 3-State Outputs 數(shù)據(jù)表 (Rev. D) 1997年 5月 1日
應用手冊 慢速或浮點 CMOS 輸入的影響 (Rev. E) PDF | HTML 英語版 (Rev.E) 2025年 3月 26日
應用手冊 Power-Up Behavior of Clocked Devices (Rev. B) PDF | HTML 2022年 12月 15日
選擇指南 Logic Guide (Rev. AB) 2017年 6月 12日
應用手冊 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
選擇指南 邏輯器件指南 2014 (Rev. AA) 最新英語版本 (Rev.AC) PDF | HTML 2014年 11月 17日
選擇指南 《高級總線接口邏輯器件選擇指南》 英語版 2010年 7月 7日
用戶指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
應用手冊 選擇正確的電平轉(zhuǎn)換解決方案 (Rev. A) 英語版 (Rev.A) 2006年 3月 23日
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應用手冊 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
應用手冊 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
應用手冊 使用邏輯器件進行設計 (Rev. C) 1997年 6月 1日
應用手冊 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
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應用手冊 Understanding Advanced Bus-Interface Products Design Guide 1996年 5月 1日
選擇指南 Logic Guide (Rev. AC) PDF | HTML 1994年 6月 1日

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用戶指南: PDF | HTML
英語版 (Rev.B): PDF | HTML
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SOIC (DW) 24 Ultra Librarian
SSOP (DB) 24 Ultra Librarian

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包含信息：
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測
包含信息：
  • 制造廠地點
  • 封裝廠地點

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