主頁(yè) 電源管理 柵極驅(qū)動(dòng)器 低側(cè)驅(qū)動(dòng)器

LM5112-Q1

正在供貨

具有 4V UVLO 和專(zhuān)用輸入接地的汽車(chē)類(lèi) 7A/3A 單通道柵極驅(qū)動(dòng)器

可提供此產(chǎn)品的更新版本

功能與比較器件相同，但引腳排列有所不同
UCC27614-Q1 正在供貨 具有 4V UVLO、30V VDD 和低傳播延遲的汽車(chē)級(jí) 10A/10A 單通道柵極驅(qū)動(dòng)器 More recent driver with wide VDD and small package options

產(chǎn)品詳情

Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (μs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3 Driver configuration Single
Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (μs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3 Driver configuration Single
WSON (NGG) 6 9 mm2 3 x 3
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
下載 觀(guān)看帶字幕的視頻 視頻

您可能感興趣的相似產(chǎn)品

功能與比較器件相同，但引腳排列有所不同
UCC27322-Q1 正在供貨 具有同相輸入的汽車(chē)類(lèi) 9A/9A 單通道柵極驅(qū)動(dòng)器 9-A drive current
UCC57108-Q1 正在供貨 具有去飽和保護(hù)和 8V 欠壓鎖定功能的汽車(chē)級(jí)低側(cè) 3A/3A 驅(qū)動(dòng)器 Bipolar ground feature in a more recent device

技術(shù)文檔

star =有關(guān)此產(chǎn)品的 TI 精選熱門(mén)文檔
未找到結(jié)果。請(qǐng)清除搜索并重試。
查看全部 8
類(lèi)型 標(biāo)題 下載最新的英語(yǔ)版本 日期
* 數(shù)據(jù)表 LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 數(shù)據(jù)表 (Rev. C) PDF | HTML 2015年 10月 22日
應(yīng)用簡(jiǎn)報(bào) 了解峰值源電流和灌電流 (Rev. A) 英語(yǔ)版 (Rev.A) 2020年 4月 29日
應(yīng)用簡(jiǎn)報(bào) 適用于柵極驅(qū)動(dòng)器的外部柵極電阻器設(shè)計(jì)指南 (Rev. A) 英語(yǔ)版 (Rev.A) 2020年 4月 29日
應(yīng)用簡(jiǎn)報(bào) How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
更多文獻(xiàn)資料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文獻(xiàn)資料 MOSFET 和 IGBT 柵極驅(qū)動(dòng)器電路的基本原理 最新英語(yǔ)版本 (Rev.A) 2018年 4月 17日
應(yīng)用簡(jiǎn)報(bào) Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日
應(yīng)用手冊(cè) An Alternative Approach to Higher-Power Boost Converters 2009年 11月 30日

設(shè)計(jì)和開(kāi)發(fā)

如需其他信息或資源，請(qǐng)點(diǎn)擊以下任一標(biāo)題進(jìn)入詳情頁(yè)面查看（如有）。

模擬工具

PSPICE-FOR-TI — PSpice? for TI 設(shè)計(jì)和仿真工具

PSpice? for TI 可提供幫助評(píng)估模擬電路功能的設(shè)計(jì)和仿真環(huán)境。此功能齊全的設(shè)計(jì)和仿真套件使用 Cadence? 的模擬分析引擎。PSpice for TI 可免費(fèi)使用，包括業(yè)內(nèi)超大的模型庫(kù)之一，涵蓋我們的模擬和電源產(chǎn)品系列以及精選的模擬行為模型。

借助?PSpice for TI 的設(shè)計(jì)和仿真環(huán)境及其內(nèi)置的模型庫(kù)，您可對(duì)復(fù)雜的混合信號(hào)設(shè)計(jì)進(jìn)行仿真。創(chuàng)建完整的終端設(shè)備設(shè)計(jì)和原型解決方案，然后再進(jìn)行布局和制造，可縮短產(chǎn)品上市時(shí)間并降低開(kāi)發(fā)成本。?

在?PSpice for TI 設(shè)計(jì)和仿真工具中，您可以搜索 TI (...)
發(fā)送申請(qǐng)
封裝 引腳 CAD 符號(hào)、封裝和 3D 模型
WSON (NGG) 6 Ultra Librarian

訂購(gòu)和質(zhì)量

包含信息：
  • RoHS
  • REACH
  • 器件標(biāo)識(shí)
  • 引腳鍍層/焊球材料
  • MSL 等級(jí)/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測(cè)
包含信息：
  • 制造廠(chǎng)地點(diǎn)
  • 封裝廠(chǎng)地點(diǎn)

推薦產(chǎn)品可能包含與 TI 此產(chǎn)品相關(guān)的參數(shù)、評(píng)估模塊或參考設(shè)計(jì)。

支持和培訓(xùn)

可獲得 TI 工程師技術(shù)支持的 TI E2E? 論壇

所有內(nèi)容均由 TI 和社區(qū)貢獻(xiàn)者按“原樣”提供，并不構(gòu)成 TI 規(guī)范。請(qǐng)參閱使用條款。

如果您對(duì)質(zhì)量、包裝或訂購(gòu) TI 產(chǎn)品有疑問(wèn)，請(qǐng)參閱 TI 支持。??????????????

視頻