SLVK226 October 2025 TPS7H4012-SEP
The primary concern for the TPS7H401x-SEP is the robustness against the destructive single-event effects (DSEE): single-event latch-up (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR). In mixed technologies such as the BiCMOS process used on the TPS7H401x-SEP, the CMOS circuitry introduces a potential for SEL susceptibility.
SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) (1,2). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed, the device is reset, or until the device is destroyed by the high-current state. The TPS7H401x-SEP was tested for SEL at the maximum recommended input voltage (VIN) of 14V. The output load was configured to a constant resistance value to provide the maximum output current of each respective device. During testing of the seven devices, the TPS7H401x-SEP did not exhibit any SEL with heavy-ions with LETEFF = 48 MeV×cm2/mg at flux of ≈105 ions/cm2/s, fluence of ≈107 ions/cm2, and a die temperature of ≈125°C.
The TPS7H401x-SEP was evaluated for SEB/SEGR at a maximum voltage of 14V in enabled and disabled mode. Because it has been shown that the MOSFET susceptibility to burnout decrement with temperature (5), the device was evaluated while operating under room temperatures. The device was tested with no external thermal control device. During the SEB/SEGR testing, not a single current event was observed, demonstrating that the TPS7H401x-SEP is SEB/SEGR-free up to LETEFF = 48 MeV×cm2/mg at a flux of ≈105 ions/cm2/s, fluences of ≈107 ions/cm2, and a die temperature of ≈25°C.
During SET/SEFI testing, the TPS7H401x-SEP was characterized at VIN of 5V and 12V. VOUT, SS_TR, and PWRGD signals were monitored. Throughout this testing, not a single SEFI was observed, demonstrating that the TPS7H401x-SEP is SEFI free up to LETEFF = 48 MeV×cm2/mg at a flux of ≈105 ions/cm2/s, fluences of ≈107 ions/cm2, and a die temperature of ≈25°C. SETs were characterized with an LETEFF = 48 MeV×cm2/mg at a flux of ≈105 ions/cm2/s, fluences of ≈107 ions/cm2, and a die temperature of ≈25°C. For more details on the SET testing of the TPS7H401x-SEP, see Section 8.