SLVK226 October 2025 TPS7H4012-SEP
- 1
- TPS7H4012-SEP and TPS7H4013-SEP Single-Event Effects (SEE)
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 LETEFF and Range Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A References
5 LETEFF and Range Calculation
Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H401x-SEP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)The TPS7H401x-SEP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of four levels of standard thickness aluminum and Damascene copper. The total stack height from the surface of the passivation to the silicon surface is 13.5 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the TPS7H401x-SEP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with:
- SEUSS 2024 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models).
- MSU Stack-Up Calculator (provided by MSU FRIB based on the latest SRIM-2013 [7] models).
The results are shown in Table 5-1.
|
Facility |
Ion Type | Beam Energy (MeV/nucleon) | Degrader Steps (#) | Degrader Angle |
Copper Foil Width (μm) |
Beam Port Window |
Air Gap (mm) |
Angle of Incidence |
LETEFF (MeV·cm2/ mg) | Range in Silicon (μm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
TAMU |
109Ag | 15 | 0 | 0 |
- |
1-mil Aramica |
40 |
0 |
48.2 |
91.6 |
|
KSEE |
109Ag |
19.5 |
- |
- |
5 |
3-mil PEN |
60 |
0 |
48 |
89.3 |