SLVK162A December 2023 – August 2024 TPS7H6003-SP , TPS7H6013-SP , TPS7H6023-SP
1.2 Device Details
Table 1-1 lists the device information and test conditions used in the NDD characterization.
Table 1-1 Device and Exposure
Details
| NDD Exposure Details | |
|---|---|
| TI Device | TPS7H6003-SP |
| TI Part Name | 5962R2220101VXC |
| Device Function | Half Bridge Gate Driver |
| Package | 48-pin CFP (HBX) |
| Technology | LBC7 |
| Lot Number and Date Code | 3008205 / 2324A |
| Sample Quantity | 9 + 1 control unit |
| Exposure Facility | Fast Neutron Irradiation (FNI) Facility of University of Massachusetts Lowell Research Reactor (UMLRR) |
| Neutron Fluence (1-MeV equivalent) Level | 1 × 1012, 5 × 1012, 1 × 1013 n/cm2 |
| Irradiation Temperature | 25°C |
Figure 1-1 TPS7H6003-SP Device Used in
Exposure