ZHCSIQ7B August 2018 – October 2024 UCC28950 , UCC28951
PRODUCTION DATA
In this design to meet efficiency and voltage requirements 20A, 650V, CoolMOS FETs from Infineon are chosen for QA..QD.
The FET drain to source on resistance is:

The FET Specified COSS is:

The voltage across drain-to-source (VdsQA) where COSS was measured as a data sheet parameter:

Calculate average Coss [2] using Equation 49:

The QA FET gate charge is:

The voltage applied to FET gate to activate FET is:

Calculate QA losses (PQA) based on Rds(on)QA and gate charge (QAg) using Equation 52:

Recalculate the power budget using Equation 53:
