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ZHCSR53B October 2023 – May 2024 TPSM86837 , TPSM86838

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RCG|19
- MPQF735A

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

5.5 Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document unless otherwise noted. These specifications are interpreted as conditions that do not degrade the parametric or functional specifications of the device for the life of the product containing it. Typical values correspond to T_J = 25°C, V_IN = 24V. Minimum and maximum limits are based on T_J = –40°C to +150°C, V_IN = 4.5V to 28V (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_Q	Quiescent current, operating ¹	T_J = 25°C, V_EN = 5V, V_FB = 0.7V (TPSM86838)		350		μA
I_Q	Quiescent current, operating ¹	T_J = 25°C, V_EN = 5V, V_FB = 0.65V (TPSM86837)		45		μA
I_SD	Shutdown supply current	T_J = 25°C, V_EN = 0V		3		μA
UVLO
UVLO	V_IN undervoltage lockout	Wake up V_IN voltage	4.0	4.2	4.4	V
		Shutdown V_IN voltage	3.5	3.65	3.8	V
		Hysteresis V_IN voltage		550		mV
ENABLE(EN PIN)
I_{EN_INPUT}	Input current	V_EN = 1.1V		1		μA
I_{EN_HYS}	Hysteresis current	V_EN = 1.3V		3		μA
V_{EN_ON}	Enable threshold	EN rising		1.18	1.26	V
V_{EN_OFF}	Enable threshold	EN falling	1	1.07		V
FEEDBACK VOLTAGE
V_FB	Feedback voltage	V_OUT = 5V, continuous mode operation, T_J = 25°C	0.594	0.6	0.606	V
V_FB	Feedback voltage	V_OUT = 5V, continuous mode operation, T_J = –40°C to 150°C	0.591	0.6	0.609	V
CURRENT LIMIT
I_{LS_OCL}	Low-side MOSFET valley current limit		8	9.6	11.1	A
I_{HS_OCL}	High-side MOSFET peak current limit		12.75	15	17.25	A
I_NOC	Reverse current limit for FCCM		3			A
DUTY CYCLE and FREQUENCY CONTROL
F_SW	Switching frequency	V_IN = 24V, V_OUT = 5V, continuous mode operation, Mode setting to 800kHz		800		kHz
t_ON(MIN)	Minimum on time²			50		ns
t_OFF(MIN)	Minimum off time²	T_J = 25°C		150		ns
SOFT START
I_SS	Soft-start charging current			6		uA
POWER GOOD
V_PGTH	PG lower threshold - falling	% of V_FB		85%
	PG lower threshold - rising	% of V_FB		90%
	PG upper threshold - falling	% of V_FB		110%
	PG upper threshold - rising	% of V_FB		115%
t_{PG_DLY}	PG delay	PG from low-to-high		64		us
t_{PG_DLY}	PG delay	PG from high-to-low		32		us
V_OVP	Output OVP threshold	OVP detect(L->H)		125%
t_{OVP_DEG}	OVP Prop deglitch	T_J = 25°C		32		us
V_UVP	Output UVP threshold	Hiccup detect(H->L)		65%
t_{UVP_WAIT}	UV protection hiccup wait time			256		us
t_{UVP_HICCUP}	UV protection hiccup time before recovery			10.5		*t_SS
THERMAL SHUTDOWN
Thermal shutdown threshold³		Temperature rising	150	165		°C
Thermal shutdown threshold³		Hysteresis		30		°C
SW DISCHARGE RESISTANCE
V_OUT discharge resistance		V_EN = 0, V_SW = 0.5V, T_J = 25°C		200		Ω

(1) Not representative of the total input current of the system when in regulation. Specified by design and characterization test.

(2) Not production tested. Specified by design.

(3) Not production tested. Specified by design and engineering sample correlation.