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ZHCSMH9C april 2022 – august 2023 TPSI3052-Q1

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DWZ|8
- MPSS140

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6.10 Switching Characteristics

over operating free-air temperature range (unless otherwise noted). Typicals at T_A = 25℃. C_VDDP = 220 nF (two-wire mode), C_VDDP = 1 μF (three-wire mode) , C_DIV1 = 5.1 nF, C_DIV2 = 15 nF, C_VDRV= 100 pF, R_PXFR = 7.32 k? ±1%

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
TWO-WIRE MODE
t_{LO_EN}	Low time of EN.		5			μs
t_{LH_VDDH}	Propagation delay time from EN rising to VDDH at 50% level.	EN = 0 V → 6.5 V, V_VDDH = 7.5 V.		165		μs
t_{LH_VDRV}	Propagation delay time from EN rising to VDRV at 90% level.	EN = 0 V → 6.5 V, V_VDRV = 13.5 V.		185		μs
t_{HL_VDRV}	Propagation delay time from EN falling to VDRV at 10% level.	EN = 6.5 V → 0 V, V_VDRV = 1.5 V.		2.4	3	μs
t_{R_VDRV}	VDRV rise time from EN rising to VDRV from 15% to 85% level.	EN = 0 V → 6.5 V, V_VDRV= 2.25 V to 12.75 V.		6		ns
t_{F_VDRV}	VDRV fall time from EN falling to VDRV from 85% to 15% level.	EN = 6.5 V → 0 V, V_VDRV= 12.75 V to 2.25 V.		5		ns
THREE-WIRE MODE
t_{LO_EN}	Low time of EN.	V_VDDP = 3.3 V, V_VDDH = steady state.	5			μs
t_{HI_EN}	High time of EN.	V_VDDP = 3.3 V, V_VDDH = steady state.	5			μs
t_{HI_VDRV}	High time of VDRV in one-shot enable mode. TPSI3052S-Q1 only. One-shot enable only available in three-wire mode.	V_VDDP = 3.3 V, steady state.		2.5		μs
t_{LH_VDDH}	Propagation delay time from VDDP rising to VDDH at 50% level.	EN = 0 V, V_VDDP = 0 V → 3.3 V at 1 V/μs, V_VDDH = 7.5 V. C_DIV1 = 3.3 nF, C_DIV2 = 220 nF.		85		μs
t_{LH_VDRV}	Propagation delay time from EN rising to VDRV at 90% level	V_VDDP = 3.3 V, V_VDDH steady state, EN = 0 V → 3.3 V, V_VDRV = 13.5 V.		3	4.5	μs
t_{HL_VDRV}	Propagation delay time from EN falling to VDRV at 10% level	V_VDDP = 3.3 V, V_VDDH steady state, EN = 3.3 V → 0 V, V_VDRV = 1.5 V.		2.5	3	μs
t_{HL_VDRV_PD}	Propagation delay time from VDDP falling to VDRV at 10% level. Timeout mechanism due to loss of power on primary supply.	EN = 3.3 V, V_VDDP= 3.3 V → 0 V at -1 V/μs, V_VDRV = 1.5 V.		300		μs
t_{R_VDRV}	VDRV rise time from EN rising to VDRV from 15% to 85% level	V_VDDP = 3.3 V, V_VDDH steady state, EN = 0 V → 3.3 V, V_VDRV= 2.25 V to 12.75 V.		6		ns
t_{F_VDRV}	VDRV fall time from EN falling to VDRV from 85% to 15% level	V_VDDP = 3.3 V, V_VDDH steady state, EN = 3.3 V → 0 V, V_VDRV= 12.75 V to 2.25 V.		5		ns