4 Revision History
Changes from Revision A (November 2022) to Revision B (June 2023)
- 將狀態(tài)從預(yù)告信息 更改為量產(chǎn)數(shù)據(jù)
Go
- 更新了“特性”部分中的集成雪崩額定 MOSFET 說(shuō)明，以添加耐壓測(cè)試說(shuō)明Go
- 在“應(yīng)用”部分中添加了能源存儲(chǔ)系統(tǒng) (ESS) 并更新了鏈接Go
- Updated UVLO threshold voltages to align with 5V operation in
Specifications sectionGo
- Increased secondary side HBM ESD performance from 1000V to
1500VGo
- Added reference to Layout Guidelines in the Avalanche Robustness
sectionGo
- Updated Layout Guidelines to include
further EMI considerations and clarified the high voltage and thermal
considerationsGo
- Updated EVM images in Layout Example section
to show the secondary side metallization for optimized thermals.Go
- Added #GUID-A85DA31A-7A4B-42CB-A260-1D0319FB6745/GUID-9AFE882A-EBE9-4FBD-AA08-CEE1473CC248 in Layout Example sectionGo