91大神精品伊人,少妇BBBB搡BBBB韩国

ZHCSO27B May 2021 – December 2022 TPS7H4002-SP

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

HKH|20
- MCDF004D
KGD|0

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6.5 Electrical Characteristics

T_J = –55°C to 125°C, VIN = PVIN = 3.0 V to 5.5 V (unless otherwise noted)

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage		3.0		5.5	V
PVIN internal UVLO threshold	PVIN rising		2.50		V
PVIN internal UVLO hysteresis			450		mV
VIN operating input voltage		3.0		5.5	V
VIN internal UVLO threshold	VIN rising		2.75	3.0	V
VIN internal UVLO hysteresis			150		mV
VIN shutdown supply current	V_EN = 0 V		1.75	3	mA
VIN operating – non switching supply current	V_SENSE = V_BG		2.5	5	mA
ENABLE AND UVLO (EN PIN)
Enable threshold	Rising		1.14	1.18	V
Enable threshold	Falling	1.05	1.12		V
Input current	V_EN = 1.1 V		6.1		μA
Hysteresis current	V_EN = 1.3 V		3.0		μA
VOLTAGE REFERENCE
Voltage reference	0 A ≤ Iout ≤ 3 A, –55°C	0.795	0.806	0.817	V
	0 A ≤ Iout ≤ 3 A, 25°C	0.796	0.807	0.818
	0 A ≤ Iout ≤ 3 A, 125°C	0.797	0.808	0.819
REFCAP voltage	470 nF		1.211		V
MOSFET
High-side switch resistance	PVIN=VIN= 3 V, lead length = 4 mm		50		m?
High-side switch resistance⁽¹⁾	PVIN=VIN= 5 V, lead length = 4mm		45		m?
High-side switch resistance⁽¹⁾	PVIN=VIN= 5.5 V, lead length = 4 mm		43		m?
Low-side switch resistance⁽¹⁾	PVIN=VIN= 3 V, lead length = 4mm		35		m?
Low-side switch resistance⁽¹⁾	PVIN=VIN= 5 V, lead length = 4mm		34		m?
Low-side switch resistance⁽¹⁾	PVIN=VIN= 5.5 V, lead length = 4mm		33		m?
ERROR AMPLIFIER
Error amplifier transconductance (g_m)⁽²⁾	–2 μA < I_COMP < 2 μA, V_(COMP) = 1 V	900	1400	1900	μS
Error amplifier dc gain⁽²⁾	V_SENSE = 0.8 V		10000		V/V
Error amplifier source current⁽²⁾	V_(COMP) = 1 V, 100-mV input overdrive	85	140	185	μA
Error amplifier sink current ⁽²⁾	V_(COMP) = 1 V, 100-mV input overdrive	85	140	185	μA
Error amplifier output resistance ⁽²⁾			7		M?
Start switching threshold⁽²⁾			0.25		V
COMP to Iswitch gm⁽²⁾	-55°C, V_(COMP) ≤ 1.1 V		12		S
	25°C, V_(COMP) ≤ 1.1 V		12
	125°C, V_(COMP) ≤ 1.1 V		12
CURRENT LIMIT
High-side switch current limit threshold ⁽³⁾	VIN = 3 V		7.9		A
	VIN = 5 V		6.2
	VIN = 5.5 V		6.2
Low-side switch sourcing current limit⁽³⁾	VIN = 5 V		8		A
Low-side switch sinking current limit	VIN = 5 V		3		A
SLOPE COMPENSATION
Slope compensation	f_sw = 100 kHz		-0.69		A/μs
	f_sw = 500 kHz		-3.4
	f_sw = 1 MHz		-7.0
THERMAL SHUTDOWN
Thermal shutdown			170		°C
Thermal shutdown hysteresis			30		°C
INTERNAL SWITCHING FREQUENCY
Internally set frequency	RT = Open	395	500	585	kHz
Externally set frequency	RT = 100 kΩ (1%)	395	500	585	kHz
	RT = 487 kΩ (1%)	80	100	115
	RT = 47 kΩ (1%)	900	1000	1100
EXTERNAL SYNCHRONIZATION
SYNC out low-to-high rise time (10%/90%)	Cload = 25 pF		70	130	ns
SYNC out high-to-low fall time (90%/10%)	Cload = 25 pF		6	15.5	ns
Falling edge delay time⁽⁵⁾			180		°
SYNC out high level threshold	I_OH = 50 μA	VIN–0.3			V
SYNC out low level threshold	I_OL = 50 μA			600	mV
SYNC in low level threshold	PVIN=VIN= 3 V			700	mV
SYNC in high level threshold	PVIN=VIN= 3 V	2.45			V
SYNC in low level threshold	PVIN=VIN= 5.5 V			700	mV
SYNC in high level threshold	PVIN=VIN= 5.5 V	4.25			V
SYNC in frequency range⁽⁴⁾		100		1000	kHz
PH (PH PIN)
Minimum on time	Measured at 10% to 90% of VIN, 25°C, I_PH = 2 A		190	235	ns
SLOW START AND TRACKING (SS/TR PIN)
SS charge current		1.5	2.5	3	μA
SS/TR to VSENSE matching	V_(SS/TR) = 0.4 V		30	90	mV
POWER GOOD (PWRGD PIN)
VSENSE threshold	V_SENSE falling (fault)		91		% Vref
	V_SENSE rising (good)		94
	V_SENSE rising (fault)		109
	V_SENSE falling (good)		106
Output high leakage	V_SENSE = Vref, V_(PWRGD) = 5 V		30	181	nA
Output low	I_(PWRGD) = 2 mA			0.3	V
Minimum VIN for valid output	V_(PWRGD) < 0.5 V at 100 μA		0.6	1	V
Minimum SS/TR voltage for PWRGD				1.55	V

(1) Measured at pins.

(2) Ensured by design only. Not tested in production.

(3) Parameter is not tested in production.

(4) Parameter is production tested at nominal voltage with VIN = PVIN = 5 V.

(5) Bench verified. Not tested in production.