ZHCSBM9C SEPTEMBER 2013 – June 2018 TPS53513
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IVDD | VDD bias current | TA = 25°C, No load
Power conversion enabled (no switching) |
1350 | 1850 | µA | |
| IVDDSTBY | VDD standby current | TA = 25°C, No load
Power conversion disabled |
850 | 1150 | µA | |
| IVIN(leak) | VIN leakage current | VEN = 0 V | 0.5 | µA | ||
| VREF OUTPUT | ||||||
| VVREF | Reference voltage | FB w/r/t GND, TA = 25°C | 597 | 600 | 603 | mV |
| VVREFTOL | Reference voltage tolerance | FB w/r/t GND, TJ = 0°C to 85°C | –0.6% | 0.5% | ||
| FB w/r/t GND, TJ = –40°C to 85°C | –0.7% | 0.5% | ||||
| OUTPUT VOLTAGE | ||||||
| IFB | FB input current | VFB = 600 mV | 50 | 100 | nA | |
| IVODIS | VO discharge current | VVO = 0.5 V, Power Conversion Disabled | 10 | 12 | 15 | mA |
| SMPS FREQUENCY | ||||||
| fSW | VO switching frequency(2) | VIN = 12 V, VVO = 3.3 V, RDR < 0.041 | 250 | kHz | ||
| VIN = 12 V, VVO = 3.3 V, RDR = 0.096 | 300 | |||||
| VIN = 12 V, VVO = 3.3 V, RDR = 0.16 | 400 | |||||
| VIN = 12 V, VVO = 3.3 V, RDR = 0.229 | 500 | |||||
| VIN = 12 V, VVO = 3.3 V, RDR = 0.297 | 600 | |||||
| VIN = 12 V, VVO = 3.3 V, RDR = 0.375 | 750 | |||||
| VIN = 12 V, VVO = 3.3 V, RDR = 0.461 | 850 | |||||
| VIN = 12 V, VVO = 3.3 V, RDR > 0.557 | 1000 | |||||
| tON(min) | Minimum on-time | TA = 25°C(1) | 60 | ns | ||
| tOFF(min) | Minimum off-time | TA = 25°C | 175 | 240 | 310 | ns |
| INTERNAL BOOTSTRAP SW | ||||||
| VF | Forward Voltage | VVREG–VBST, TA = 25°C, IF = 10 mA | 0.15 | 0.25 | V | |
| IVBST | VBST leakage current | TA = 25°C, VVBST = 33 V, VSW = 28 V | 0.01 | 1.5 | µA | |
| LOGIC THRESHOLD | ||||||
| VENH | EN enable threshold voltage | 1.3 | 1.4 | 1.5 | V | |
| VENL | EN disable threshold voltage | 1.1 | 1.2 | 1.3 | V | |
| VENHYST | EN hysteresis voltage | 0.22 | V | |||
| VENLEAK | EN input leakage current | –1 | 0 | 1 | µA | |
| SOFT START | ||||||
| tSS | Soft-start time | 1 | ms | |||
| PGOOD COMPARATOR | ||||||
| VPGTH | VDDQ PGOOD threshold | PGOOD in from higher | 104% | 108% | 111% | |
| PGOOD in from lower | 89% | 92% | 96% | |||
| PGOOD out to higher | 113% | 116% | 120% | |||
| PGOOD out to lower | 80% | 84% | 87% | |||
| IPG | PGOOD sink current | VPGOOD = 0.5 V | 4 | 6 | mA | |
| tPGDLY | PGOOD delay time | Delay for PGOOD going in | 0.8 | 1.0 | 1.2 | ms |
| Delay for PGOOD coming out | 2 | µs | ||||
| IPGLK | PGOOD leakage current | VPGOOD = 5 V | –1 | 0 | 1 | µA |
| CURRENT DETECTION | ||||||
| RTRIP | TRIP pin resistance range | 20 | 50 | kΩ | ||
| IOCL | Current limit threshold, valley | RTRIP = 34.8 kΩ | 6.2 | 8.0 | 9.8 | A |
| RTRIP = 25.5 kΩ | 4.2 | 6.2 | 8.2 | |||
| IOCLN | Negative current limit threshold, valley | RTRIP = 34.8 kΩ | –10.5 | –7.9 | –5.3 | A |
| RTRIP = 25.5 kΩ | –8.7 | –6.1 | –3.5 | |||
| VZC | Zero cross detection offset | 0 | mV | |||
| PROTECTIONS | ||||||
| VVREGUVLO | VREG undervoltage-lockout (UVLO) threshold voltage | Wake-up | 3.25 | 3.34 | 3.41 | V |
| Shutdown | 3.00 | 3.12 | 3.19 | |||
| VVDDUVLO | VDD UVLO threshold voltage | Wake-up (default) | 4.15 | 4.25 | 4.35 | V |
| Shutdown | 3.95 | 4.05 | 4.15 | |||
| VOVP | Overvoltage-protection (OVP) threshold voltage | OVP detect voltage | 116% | 120% | 124% | |
| tOVPDLY | OVP propagation delay | With 100-mV overdrive | 300 | ns | ||
| VUVP | Undervoltage-protection (UVP) threshold voltage | UVP detect voltage | 64% | 68% | 71% | |
| tUVPDLY | UVP delay | UVP filter delay | 1 | ms | ||
| THERMAL SHUTDOWN | ||||||
| TSDN | Thermal shutdown threshold(1) | Shutdown temperature | 140 | °C | ||
| Hysteresis | 40 | |||||
| LDO VOLTAGE | ||||||
| VREG | LDO output voltage | VIN = 12 V, ILOAD = 10 mA | 4.65 | 5 | 5.45 | V |
| VDOVREG | LDO low droop drop-out voltage | VIN = 4.5 V, ILOAD = 30 mA, TA = 25°C | 365 | mV | ||
| ILDOMAX | LDO overcurrent limit | VIN = 12 V, TA = 25°C | 170 | 200 | mA | |
| INTERNAL MOSFETS | ||||||
| RDS(on)H | High-side MOSFET on-resistance | TA = 25°C | 13.8 | 15.5 | mΩ | |
| RDS(on)L | Low-side MOSFET on-resistance | TA = 25°C | 5.9 | 7.0 | mΩ | |