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ZHCSIV9F September 2009 – October 2018 TPS386000 , TPS386040

PRODUCTION DATA.

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGP|20
- MPQF126G

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGP|20
- QFND009Y

訂購信息

6.5 Electrical Characteristics

Over the operating temperature range of T_J = –40°C to 125°C, 1.8 V < V_DD < 6.5 V, R_RESETn (n = 1, 2, 3, 4) = 100 kΩ to V_DD (TPS386000 only), C_RESETn (n = 1, 2, 3, 4L, 4H) = 50 pF to GND, R_WDO = 100 kΩ to V_DD, C_WDO = 50 pF to GND, V_MR = 100 kΩ to V_DD, WDI = GND, and CTn (n = 1, 2, 3, 4) = open, unless otherwise noted. Typical values are at T_J = 25°C.

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_DD	Input supply range			1.8		6.5	V
I_DD	Supply current (current into V_DD pin)		V_DD = 3.3 V, RESETn or RESETn not asserted, WDI toggling⁽¹⁾, no output load, and VREF open		11	19	μA
I_DD	Supply current (current into V_DD pin)		V_DD = 6.5 V, RESETn or RESETn not asserted, WDI toggling⁽¹⁾, no output load, and VREF open		13	22	μA
	Power-up reset voltage⁽²⁾⁽³⁾		V_OL (max) = 0.2 V, I_RESETn = 15 μA			0.9	V
V_ITN	Negative-going input threshold voltage		SENSE1, SENSE2, SENSE3, SENSE4L	396	400	404	mV
V_ITP	Positive-going input threshold voltage		SENSE4H	396	400	404	mV
V_HYSN	Hysteresis (positive-going) on V_ITN		SENSE1, SENSE2, SENSE3, SENSE4L		3.5	10	mV
V_HYSP	Hysteresis (negative-going) on V_ITP		SENSE4H		3.5	10	mV
I_SENSE	Input current at SENSEm pin		V_SENSEm = 0.42 V	–25	±1	+25	nA
I_CT	CTn pin charging current	CT1	C_CT1 > 220 pF, V_CT1 = 0.5 V⁽⁴⁾	245	300	355	nA
I_CT	CTn pin charging current	CT2, CT3, CT4	C_CTn > 220 pF, V_CTn = 0.5 V⁽⁴⁾	235	300	365	nA
V_TH(CTn)	CTn pin threshold		C_CTn > 220 pF	1.18	1.238	1.299	V
V_IL	MR and WDI logic low input			0		0.3V_DD	V
V_IH	MR and WDI logic high input			0.7V_DD			V
V_OL	Low-level RESETn or RESETn output voltage		I_OL = 1 mA			0.4	V
	Low-level RESETn or RESETn output voltage		SENSEn = 0 V, 1.3 V < V_DD < 1.8 V, I_OL = 0.4 mA⁽²⁾			0.3	V
	Low-level WDO output voltage		I_OL = 1 mA			0.4	V
V_OH	High-level RESETn or RESETn output voltage	TPS386040 only	I_OL = –1 mA	V_DD – 0.4			V
	High-level WDO output voltage	TPS386040 only	I_OL = –1 mA	V_DD – 0.4			V
	High-level WDO output voltage	TPS386040 only	SENSEn = 0 V, 1.3 V < V_DD < 1.8 V, I_OL = –0.4 mA⁽²⁾	V_DD – 0.3			V
I_LKG	RESETn, RESETn, WDO, and WDO leakage current	TPS386000 only	V_RESETn = 6.5 V, RESETn, RESETn, WDO, and WDO are logic high	–300		300	nA
V_REF	Reference voltage output		1 μA < I_VREF < 0.2 mA (source only, no sink)	1.18	1.2	1.22	V
C_IN	Input pin capacitance		CTn: 0 V to V_DD, other pins: 0 V to 6.5 V		5		pF

(1) Toggling WDI for a period less than t_WDT negatively affects I_DD.

(2) These specifications are beyond the recommended V_DD range, and only define RESETn or RESETn output performance during V_DD ramp up.

(3) The lowest supply voltage (V_DD) at which RESETn or RESETn becomes active; t_RISE(VDD) ≥ 15 μs/V.

(4) CTn (where n = 1, 2, 3, or 4) are constant current charging sources working from a range of 0 V to V_TH(CTn), and the device is tested at V_CTn = 0.5 V. For I_CT performance between 0 V and V_TH(CTn), see Figure 28.