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ZHCSEZ9C January 2016 – August 2020 TPD3S714-Q1

PRODUCTION DATA

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DBQ|16
- MSOI004H

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.7 Electrical Characteristics

over operating free-air temperature range, EN = 0 V, V_{BUS_SYS} = 5 V, V_IN = 3.3 V, VD+/VD–/D+/D–/V_{BUS_CON} = float (unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT CONSUMPTION
I_{VBUS_SLEEP}	V_BUS sleep current consumption		Measured at V_{BUS_SYS} pin, EN = 5 V		45	150	μA
I_VBUS	V_BUS operating current consumption		Measured at V_{BUS_SYS} pin		285	380	μA
I_VIN	Leakage current for V_IN		Measured at V_IN pin, V_IN = 3.6 V		12	25	μA
I_ON(LEAK)	Leakage through V_BUS while shorted to battery and powered on		Measured flowing in to V_{BUS_SYS} pin, V_{BUS_SYS} = 5 V, V_{BUS_CON} = 18 V			120	μA
I_OFF(LEAK)	Leakage through V_BUS while shorted to battery and unpowered		Measured flowing out of V_{BUS_SYS} pin, V_{BUS_SYS} = 0 V, V_{BUS_CON} = 18 V			50	μA
I_{VD(OFF_LEAK)}	Leakage into data path while shorted to battery and unpowered		Measured flowing in to VD+ or VD– pins, V_{BUS_SYS} = 0 V, VD+ or VD– = 18 V, V_IN = 0 V, D+/D– = 0 V			80	μA
I_{VD(ON_LEAK)}	Leakage into data path while shorted to battery and powered on		Measured flowing in to VD+ or VD– pins, V_{BUS_SYS} = 5 V, VD+ or VD– = 18 V, D+/D– = 0 V			80	μA
V_IN PIN
V_UVLO(RISING)	Undervoltage lockout rising for V_IN	V_IN	Ramp V_IN down until FLT is deasserted, EN = 5 V	2.6	2.7	2.9	V
V_{UVLO(FALLING)}	Undervoltage lockout falling for V_IN	V_IN	Ramp V_IN until FLT is asserted, EN = 5 V	2.5	2.6	2.8	V
EN, FLT PINS
V_IH	High-level input voltage	EN	Set EN = 0 V; Sweep EN to 1.4 V; Measure when FLT is asserted	1.2			V
V_IL	Low-level input voltage	EN	Set EN = 3.3 V; Sweep EN from 3.3 V to 0.5 V; Measure when FLT is deasserted			0.8	V
I_IL	Input leakage current	EN	V_(EN) = 3.3 V ; Measure Current into EN pin			1	μA
V_OL	Low-level output voltage	FLT	I_OL = 3 mA			0.4	V
OCP CIRCUIT—V_BUS
I_LIM	Overcurrent limit	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	550	700	850	mA
OVERTEMPERATURE PROTECTION
T_SD(RISING)	The rising overtemperature protection shutdown threshold		V_{BUS_SYS} = 5 V, EN = 0 V, No Load on V_{BUS_CON}, T_A stepped up until FLT is asserted	150	165	180	℃
T_SD(FALLING)	The falling overtemperature protection shutdown threshold		V_{BUS_SYS} = 5 V, EN = 0 V, No Load on V_{BUS_CON}, T_A stepped down from T_SD(RISING) until FLT is deasserted	125	130	140	℃
T_SD(HYST)	The overtemperature protection shutdown threshold hysteresis		T_SD(RISING) – T_SD(FALLING)	10	35	55	℃
OVP CIRCUIT—V_BUS
V_OVP(RISING)	Input overvoltage protection threshold	V_{BUS_CON}	Increase V_{BUS_CON} from 5 V to 7 V. Measure when FLT is asserted	5.4	5.6	5.8	V
V_HYS(OVP)	Hysteresis on OVP	V_{BUS_CON}	Difference between rising and falling OVP thresholds on V_{BUS_CON}		50		mV
T_OVP(FALLING)	Input overvoltage protection threshold	V_{BUS_CON}	Decrease V_{BUS_CON} from 7 V to 5 V. Measure when FLT is deasserted	5.36		5.74	V
V_{UVLO(SYS_RISING)}	Undervoltage lockout rising for V_{BUS_SYS}	V_{BUS_SYS}	V_{BUS_SYS} voltage rising from 0 V to 5 V	3.1	3.3	3.6	V
V_{HYS(UVLO_SYS)}	V_{BUS_SYS} UVLO hysteresis	V_{BUS_SYS}	Difference between rising and falling UVLO thresholds on V_{BUS_SYS}	50	75	100	mV
V_{UVLO(SYS_FALLING)}	Undervoltage lockout falling for V_{BUS_SYS}	V_{BUS_SYS}	V_{BUS_SYS} voltage falling from 7 V to 3 V	3	3.2	3.5	V
V_SHRT(RISING)	Short-to-ground comparator rising threshold	V_{BUS_CON}	Increase V_{BUS_CON} voltage from 0 V until the device transitions from the short-circuit to over-current mode of operation	2.5	2.6	2.7	V
V_{SHRT(FALLING)}	Short-to-ground comparator falling threshold	V_{BUS_CON}	Set V_{BUS_SYS} = 5 V; V_IN = 3.3 V; EN = 0 V; Decrease V_{BUS_CON} voltage from 5 V until the device transitions from the overcurrent to short-circuit mode of operation	2.4	2.5	2.6	V
V_SHRT(HYST)	Short-to-ground comparator hysteresis	V_{BUS_CON}	Difference between V_SHRT(RISING) and V_{SHRT(FALLING)}	100	125	150	mV
I_SHRT	Short-to-ground current source	V_{BUS_CON}	Current sourced from V_{BUS_SYS} when device is in short-circuit mode	150		350	mA
OVP CIRCUIT—VD+/VD–
V_OVP(RISING)	Input overvoltage protection threshold	VD+/VD–	Increase VD+ or VD– (with D+ and D–) from 3.3 V to 4.5 V. Measure the value at which FLT is asserted	V_IN + 0.6	V_IN + 0.8	V_IN + 1	V
V_HYS(OVP)	Hysteresis on OVP	VD+/VD–	Difference between rising and falling OVP thresholds on VD+/VD–		50		mV
V_OVP(FALLING)	Input overvoltage protection threshold	VD+/VD–	Decrease VD+ or VD– (with D+ or D–) from 4.5 V to 2 V. Measure the value at FLT is deasserted	V_IN + 0.525	V_IN + 0.75	V_IN + 0.975	V
SHORT-TO-BATTERY
V_{(VBUS_STB)}	V_BUS hotplug short-to-battery tolerance	V_{BUS_CON}	Charge battery-equivalent capacitor to test voltage then discharge to pin under test through a 1-meter, 18-gauge wire. (See Figure 7-1 for more details)			18	V
V_{(DATA_STB)}	Data line hotplug short-to-battery tolerance	VD+/VD–				18	V
DATA LINE SWITCHES—VD+ to D+ or VD–to D–
C_ON	Equivalent on capacitance		Capacitance of D+/D– switches when enabled - measure on connector side across bias voltage 0 V to 0.4 V		6.2		pF
R_ON	On resistance		Measure resistance between D+ and VD+ or D– and VD–, voltage between 0 and 0.4 V		4	6.5	Ω
R_ON(Flat)	On resistance flatness		Measure resistance between D+ and VD+ or D– and VD–, sweep voltage between 0 V and 0.4 V		0.2	1	Ω
BW_ON	On bandwidth (–3 dB)		Measure S₂₁ bandwidth from D+ to VD+ or D– to VD– with voltage swing = 400 mVpp, V_CM= 0.2 V		860		MHz
BW_{ON_DIFF}	On bandwidth (–3 dB)		Measure S_DD21 bandwidth from D+ to VD+ and D– to VD– with voltage swing = 800 mVpp differential, V_CM = 0.2 V		1050		MHz
X_talk	Crosstalk		Measure S₂₁ bandwidth from D+ to VD– or D– to VD+ with voltage swing = 400 mVpp. Be sure to terminate open sides to 50 ohms. f = 480 MHz		–34		dB
nFET SWITCH—VBus
R_(DISCHARGE)	Output discharge resistance		EN = 5 V, Set V_{BUS_CON} = 5 V and measure current flow to ground			12500	?
R_ON	Switch ON resistance		V_{BUS_CON} = 5 V, I_OUT = 0.5 A		63	150	mΩ