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SNOS986E December 2001 – July 2014 LMH6622

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

D|8
- MSOI002K
DGK|8
- MPDS028E

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾⁽¹⁾

	MAX	UNIT
V_IN Differential	±1.2	V
Supply Voltage (V⁺ – V⁻)	13.2	V
Voltage at Input Pins	V⁺ +0.5, V⁻ −0.5	V
SOLDERING INFORMATION
Infrared or Convection (20 sec)	235	°C
Wave Soldering (10 sec)	260	°C
Junction Temperature ⁽⁴⁾	+150	°C

(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

6.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		−65°	+150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾		2000⁽²⁾	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾		200⁽²⁾	V

(1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 200-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions⁽¹⁾

		MIN	MAX	UNIT
Supply Voltage (V⁺– V⁻)		±2.25	±6	V
Temperature Range⁽³⁾⁽⁴⁾		−40	+85	°C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMH6622	LMH6622	UNIT
		Package D	Package DGK
		8 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance⁽⁴⁾	166°	211°	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 ±6 V Electrical Characteristics

Unless otherwise specified, T_J = 25°C, V⁺ = 6 V, V⁻ = −6 V, V_CM = 0 V, A_V = +2, R_F = 500 Ω, R_L = 100 Ω. Some limits apply at the temperature extremes as noted in the table.

	PARAMETER	TEST CONDITIONS	TEMPERATURE EXTREMES			ROOM TEMPERATURE			UNIT
	PARAMETER	TEST CONDITIONS	MIN⁽⁶⁾	TYP⁽⁵⁾	MAX⁽⁶⁾	MIN⁽⁶⁾	TYP⁽⁵⁾	MAX⁽⁶⁾	UNIT
DYNAMIC PERFORMANCE
f_CL	−3dB BW	V_O = 200 mV_PP					160		MHz
BW_0.1dB	0.1dB Gain Flatness	V_O = 20 0mV_PP					30		MHz
SR	Slew Rate⁽⁸⁾	V_O = 2 V_PP					85		V/μs
TS	Settling Time	V_O = 2 V_PP to ±0.1%					40		ns
TS	Settling Time	V_O = 2 V_PP to ±1.0%					35		ns
Tr	Rise Time	V_O = 0.2 V Step, 10% to 90%					2.3		ns
Tf	Fall Time	V_O = 0.2 V Step, 10% to 90%					2.3		ns
DISTORTION and NOISE RESPONSE
e_n	Input Referred Voltage Noise	f = 100 kHz					1.6		nV/√Hz
i_n	Input Referred Current Noise	f = 100 kHz					1.5		pA/√Hz
DG	Differential Gain	R_L = 150 Ω, R_F = 470 Ω, NTSC					0.03%
DP	Differential Phase	R_L = 150 Ω, R_F = 470 Ω, NTSC					0.03		deg
HD2	2^nd Harmonic Distortion	f_c = 1 MHz, V_O = 2 V_PP, R_L = 100 Ω					−90		dBc
HD2	2^nd Harmonic Distortion	f_c = 1 MHz, V_O = 2 V_PP, R_L = 500 Ω					−100		dBc
HD3	3^rd Harmonic Distortion	f_c = 1 MHz, V_O = 2 V_PP, R_L = 100 Ω					−94		dBc
HD3	3^rd Harmonic Distortion	f_c = 1 MHz, V_O = 2 V_PP, R_L = 500 Ω					−100		dBc
MTPR	Upstream	V_O = 0.6 V_RMS, 26 kHz to 132 kHz (see Figure 33)					−78		dBc
MTPR	Downstream	V_O = 0.6 V_RMS, 144 kHz to 1.1 MHz (see Figure 33)					−70		dBc
INPUT CHARACTERISTICS
V_OS	Input Offset Voltage	V_CM = 0 V	−2		+2	−1.2	+0.2	+1.2	mV
TC V_OS	Input Offset Average Drift	V_CM = 0 V⁽⁷⁾					−2.5		μV/°C
I_OS	Input Offset Current	V_CM = 0V	−1.5		1.5	−1	−0.04	1	μA
I_B	Input Bias Current	V_CM = 0V			15		4.7	10	μA
R_IN	Input Resistance	Common Mode					17		MΩ
R_IN	Input Resistance	Differential Mode					12		kΩ
C_IN	Input Capacitance	Common Mode					0.9		pF
C_IN	Input Capacitance	Differential Mode					1.0		pF
CMVR	Input Common Mode Voltage Range	CMRR ≥ 60dB					−4.75	−4.5	V
CMVR	Input Common Mode Voltage Range	CMRR ≥ 60dB				5.5	+5.7		V
CMRR	Common-Mode Rejection Ratio	Input Referred, V_CM = −4.2 V to +5.2 V	75			80	100		dB
TRANSFER CHARACTERISTICS
A_VOL	Large Signal Voltage Gain	V_O = 4 V_PP	70			74	83		dB
X_t	Crosstalk	f = 1 MHz					−75		dB
OUTPUT CHARACTERISTICS
V_O	Output Swing	No Load, Positive Swing	4.6			4.8	5.2		V
		No Load, Negative Swing			−4.4		−5.0	−4.6
		R_L = 100 Ω, Positive Swing	3.8			4.0	4.6
		R_L = 100 Ω, Negative Swing			−3.8		−4.6	−4
R_O	Output Impedance	f = 1 MHz					0.08		Ω
I_SC	Output Short Circuit Current	Sourcing to Ground ΔV_IN = 200 mV⁽³⁾,⁽⁹⁾				100	135		mA
I_SC	Output Short Circuit Current	Sinking to Ground ΔV_IN = −200 mV⁽³⁾,⁽⁹⁾				100	130		mA
I_OUT	Output Current	Sourcing, V_O= +4.3 V Sinking, V_O = −4.3 V					90		mA
POWER SUPPLY
+PSRR	Positive Power Supply Rejection Ratio	Input Referred, V_S = +5 V to +6 V	74			80	95		dB
−PSRR	Negative Power Supply Rejection Ratio	Input Referred, V_S = −5 V to −6 V	69			75	90		dB
I_S	Supply Current (per amplifier)	No Load			6.5		4.3	6	mA

6.6 ±2.5 V Electrical Characteristics

Unless otherwise specified, T_J = 25°C, V+ = 2.5 V, V− = −2.5 V, V_CM = 0 V, A_V = +2, R_F = 500 Ω, R_L = 100 Ω. Some limits apply at the temperature extremes as noted in the table.

	PARAMETER	TEST CONDITIONS	TEMPERATURE EXTREMES			ROOM TEMPERATURE			UNIT
	PARAMETER	TEST CONDITIONS	MIN⁽⁶⁾	TYP⁽⁵⁾	MAX⁽⁶⁾	MIN⁽⁶⁾	TYP⁽⁵⁾	MAX⁽⁶⁾	UNIT
DYNAMIC PERFORMANCE
f_CL	−3 dB BW	V_O = 200 mV_PP					150		MHz
BW_0.1dB	0.1dB Gain Flatness	V_O = 200 mV_PP					20		MHz
SR	Slew Rate ⁽⁸⁾	V_O = 2 V_PP					80		V/μs
T_S	Settling Time	V_O = 2 V_PP to ±0.1%					45		ns
T_S	Settling Time	V_O = 2 V_PP to ±1.0%					40		ns
T_r	Rise Time	V_O = 0.2 V Step, 10% to 90%					2.5		ns
T_f	Fall Time	V_O = 0.2 V Step, 10% to 90%					2.5		ns
DISTORTION and NOISE RESPONSE
e_n	Input Referred Voltage Noise	f = 100 kHz					1.7		nV/√Hz
i_n	Input Referred Current Noise	f = 100 kHz					1.5		pA/√Hz
HD2	2^nd Harmonic Distortion	fc = 1 MHz, V_O = 2V_PP, R_L = 100 Ω					−88		dBc
HD2	2^nd Harmonic Distortion	fc = 1 MHz, V_O = 2V_PP, R_L = 500 Ω					−98		dBc
HD3	3^rd Harmonic Distortion	fc = 1 MHz, V_O = 2 V_PP, R_L = 100 Ω					−92		dBc
HD3	3^rd Harmonic Distortion	fc = 1 MHz, V_O = 2 V_PP, R_L = 500 Ω					−100		dBc
MTPR	Upstream	V_O = 0.4V_RMS, 26kHz to 132kHz (see Figure 33)					−76		dBc
MTPR	Downstream	V_O = 0.4 V_RMS, 144 kHz to 1.1 MHz (see Figure 33)					−68		dBc
INPUT CHARACTERISTICS
V_OS	Input Offset Voltage	V_CM = 0 V	−2.3		+2.3	−1.5	+0.3	+1.5	mV
TC V_OS	Input Offset Average Drift	V_CM = 0 V⁽⁷⁾					−2.5		μV/°C
I_OS	Input Offset Current	V_CM = 0 V	−2.5		2.5	−1.5	+0.01	1.5	μA
I_B	Input Bias Current	V_CM = 0 V			15		4.6	10	μA
R_IN	Input Resistance	Common Mode					17		MΩ
R_IN	Input Resistance	Differential Mode					12		kΩ
C_IN	Input Capacitance	Common Mode					0.9		pF
C_IN	Input Capacitance	Differential Mode					1.0		pF
CMVR	Input Common Mode Voltage Range	CMRR ≥ 60dB					−1.25	−1	V
CMVR	Input Common Mode Voltage Range	CMRR ≥ 60dB				2	+2.2		V
CMRR	Common Mode Rejection Ratio	Input Referred, V_CM = −0.7 V to +1.7 V	75			80	100		dB
TRANSFER CHARACTERISTICS
A_VOL	Large Signal Voltage Gain	V_O = 1 V_PP				74	82		dB
X_t	Crosstalk	f = 1 MHz					−75		dB
OUTPUT CHARACTERISTICS
V_O	Output Swing	No Load, Positive Swing	1.2			1.4	1.7		V
		No Load, Negative Swing			−1		−1.5	−1.2
		R_L = 100 Ω, Positive Swing	1			1.2	1.5
		R_L = 100 Ω, Negative Swing			−0.9		−1.4	−1.1
R_O	Output Impedance	f = 1 MHz					0.1		Ω
I_SC	Output Short Circuit Current	Sourcing to Ground ΔV_IN = 200 mV⁽³⁾⁽⁹⁾				100	137		mA
I_SC	Output Short Circuit Current	Sinking to Ground ΔV_IN = −20 0mV⁽³⁾⁽⁹⁾				100	134		mA
I_OUT	Output Current	Sourcing, V_O = +0.8 V Sinking, V_O = −0.8 V					90		mA
POWER SUPPLY
+PSRR	Positive Power Supply Rejection Ratio	Input Referred, V_S = +2.5 V to +3 V	72			78	93		dB
−PSRR	Negative Power Supply Rejection Ratio	Input Referred, V_S = −2.5 V to −3 V	70			75	88		dB
I_S	Supply Current (per amplifier)	No Load			6.4		4.1	5.8	mA

(2) Human body model, 1.5 kΩ in series with 100 pF. Machine model, 0 Ω in series with 200 pF.

(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.

(4) The maximum power dissipation is a function of T_J(MAX), R_θJA and T_A. The maximum allowable power dissipation at any ambient temperature is P_D = (T_J(MAX) − T_A)/R_θJA. All numbers apply for packages soldered directly onto a PC board.

(5) Typical values represent the most likely parametric norm.

(6) All limits are specified by testing or statistical analysis.

(7) Offset voltage average drift is determined by dividing the change in V_OS at temperature extremes into the total temperature change.

(8) Slew rate is the slowest of the rising and falling slew rates.

(9) Short circuit test is a momentary test. Output short circuit duration is infinite for V_S ≤ ±2.5 V, at room temperature and below. For V_S > ±2.5 V, allowable short circuit duration is 1.5ms.