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SNVSB96 July 2019 LM3424-Q1

PRODUCTION DATA.

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6.5 Electrical Characteristics

V_IN = 14 V, T_A = T_J = −40°C to 125°C unless otherwise specified. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
START-UP REGULATOR (V_CC)
V_CC-REG	V_CC Regulation	I_CC = 0 mA		6.3		7.35	V
V_CC-REG	V_CC Regulation	I_CC = 0 mA, T_J = 25°C			6.9		V
I_CC-LIM	V_CC Current Limit	V_CC = 0 V		20			mA
I_CC-LIM	V_CC Current Limit	V_CC = 0 V, T_J = 25°C			25		mA
I_Q	Quiescent Current	EN = 3 V, Static				3	mA
I_Q	Quiescent Current	EN = 3 V, Static, T_J = 25°C			2		mA
I_SD	Shutdown Current	EN = 0 V, T_J = 25°C			0.1	1	µA
V_CC-UVLO	V_CC UVLO Threshold	V_CC Increasing				4.5	V
		V_CC Increasing, T_J = 25°C			4.17		V
		V_CC Decreasing		3.7			V
		V_CC Decreasing, T_J = 25°C			4.08		V
V_CC-HYS	V_CC UVLO Hysteresis	T_J = 25°C			0.1		V
ENABLE (EN)
V_EN-ST	EN start-up Threshold	EN Increasing				2.4	V
		EN Increasing, T_J = 25°C			1.75		V
		EN Decreasing		0.8			V
		EN Decreasing, T_J = 25°C			1.63		V
V_EN-HYS	EN start-up Hysteresis	T_J = 25°C			0.1		V
R_EN	EN pulldown resistance			0.245		2.85	MΩ
R_EN	EN pulldown resistance	T_J = 25°C			0.82		MΩ
OVERVOLTAGE PROTECTION (OVP)
V_TH-OVP	OVP OVLO Threshold	OVP Increasing		1.185		1.285	V
V_TH-OVP	OVP OVLO Threshold	OVP Increasing, T_J = 25°C			1.24		V
I_HYS-OVP	OVP Hysteresis Source Current	OVP Active (high)		13		27	µA
I_HYS-OVP	OVP Hysteresis Source Current	OVP Active (high), T_J = 25°C			20		µA
ERROR AMPLIFIER
V_CSH	CSH Reference Voltage	With Respect to GND		1.21		1.26	V
V_CSH	CSH Reference Voltage	With Respect to GND, T_J = 25°C			1.235		V
	Error Amplifier Input Bias Current	T_J = 25°C		–0.6	0	0.6	µA
	COMP Sink / Source Current			17		35	µA
	COMP Sink / Source Current	T_J = 25°C			26		µA
	Transconductance	T_J = 25°C			100		µA/V
	Linear Input Range	See⁽¹⁾, T_J = 25°C			±125		mV
	Transconductance Bandwidth	–6-dB Unloaded Response⁽¹⁾, T_J = 25°C			1		MHz
OSCILLATOR (RT)
f_SW	Switching Frequency	R_T = 36 kΩ		164		250	kHz
		R_T = 36 kΩ, T_J = 25°C			207		kHz
		R_T = 12 kΩ		525		669	kHz
		R_T = 12 kΩ, T_J = 25°C			597		kHz
V_RT-SYNC	Sync Threshold	T_J = 25°C			3.5		V
PWM COMPARATOR
V_CP-BASE	COMP to PWM Offset - No Slope Compensation			750		1050	mV
V_CP-BASE	COMP to PWM Offset - No Slope Compensation	T_J = 25°C			900		mV
SLOPE COMPENSATION (SLOPE)
ΔV_CP	Slope Compensation Amplitude	Additional COMP to PWM Offset - SLOPE sinking 100 µA, T_J = 25°C			85		mV
CURRENT LIMIT (IS)
V_LIM	Current Limit Threshold			215		275	mV
V_LIM	Current Limit Threshold	T_J = 25°C			245		mV
	V_LIM Delay to Output					75	ns
	V_LIM Delay to Output	T_J = 25°C			35		ns
t_ON-MIN	Leading Edge Blanking Time			140		340	ns
t_ON-MIN	Leading Edge Blanking Time	T_J = 25°C			240		ns
HIGH-SIDE TRANSCONDUCTANCE AMPLIFIER
	Input Bias Current	T_J = 25°C			10		µA
	Transconductance			20			mA/V
	Input Offset Current			–1.5		1.5	µA
	Input Offset Current	T_J = 25°C			0		µA
	Input Offset Voltage			–5		5	mV
	Input Offset Voltage	T_J = 25°C			0		mV
	Transconductance Bandwidth	I_CSH = 100 µA⁽¹⁾, T_J = 25°C			500		kHz
GATE DRIVER (GATE)
R_SRC-GATE	GATE Sourcing Resistance	GATE = High				6	Ω
R_SRC-GATE	GATE Sourcing Resistance	GATE = High, T_J = 25°C			2		Ω
R_SNK-GATE	GATE Sinking Resistance	GATE = Low				4.5	Ω
R_SNK-GATE	GATE Sinking Resistance	GATE = Low, T_J = 25°C			1.3		Ω
UNDERVOLTAGE LOCKOUT AND DIM INPUT (nDIM)
V_TH-nDIM	nDIM / UVLO Threshold			1.185	1.240	1.285	V
I_HYS-nDIM	nDIM Hysteresis Current			13	20	27	µA
DIM DRIVER (DDRV)
R_SRC-DDRV	DDRV Sourcing Resistance	DDRV = High				30	Ω
R_SRC-DDRV	DDRV Sourcing Resistance	DDRV = High, T_J = 25°C			13.5		Ω
R_SNK-DDRV	DDRV Sinking Resistance	DDRV = Low				10	Ω
R_SNK-DDRV	DDRV Sinking Resistance	DDRV = Low, T_J = 25°C			3.5		Ω
	nDIM rising to DDRV rising				700		ns
	nDIM falling to DDRV falling				360		ns
SOFT-START (SS)
I_SS	Soft-start current				10		µA
THERMAL CONTROL
V_S	V_S Voltage	I_VS = 0 A, I_VS = 1 mA		2.4		2.5	V
V_S	V_S Voltage	I_VS = 0 A, I_VS = 1 mA, T_J = 25°C			2.45		V
	TREF input bias current	V_TREF = 1.5 V V_TSENSE = 1.5 V, T_J = 25°C			0.1		µA
	TSENSE Input Bias Current	V_TREF = 1.5 V V_TSENSE = 1.5 V, T_J = 25°C			0.1		µA
I_TGAIN-MAX	TGAIN Maximum Sourcing Current	V_TGAIN = 2 V		200			µA
I_TGAIN-MAX	TGAIN Maximum Sourcing Current	V_TGAIN = 2 V, T_J = 25°C			600		µA
I_TF	CSH Current with High-side Amplifier Disabled	R_TGAIN = 10 kΩ, T_J = 25°C	V_TREF = 1.5 V V_TSENSE = 0.5 V		100		µA
			V_TREF = 1.5 V V_TSENSE = 1.4 V		10		µA
			V_TREF = 1.5 V V_TSENSE = 1.5 V		2		µA
THERMAL SHUTDOWN
T_SD	Thermal Shutdown Threshold	See⁽¹⁾, T_J = 25°C			165		°C
T_HYS	Thermal Shutdown Hysteresis	See⁽¹⁾, T_J = 25°C			25		°C

(1) These electrical parameters are ensured by design, and are not verified by test.

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訂購信息

6.5 Electrical Characteristics