ZHCSRZ2A april 2023 – june 2023 ESD451
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO <100 nA, across operating temperature range | -5.5 | 5.5 | V | ||
| ILEAK | Reverse leakage current | VIO = 5.5 V, IO to GND or GND to IO | 5 | 50 | nA | ||
| VBRR | Break-down voltage | IIO = 1 mA, IO to GND | 7 | 8 | 9 | V | |
| VBRF | Break-down voltage | IIO = 1 mA, GND to IO | 7 | 8 | 9 | V | |
| VHOLD | Holding voltage (2) | TLP, IO to GND or GND to IO | 7.2 | V | |||
| VCLAMP | Clamping voltage with TLP | IPP = 1 A, TLP, IO to GND | 7.6 | V | |||
| IPP = 5 A, TLP, IO to GND | 8.2 | V | |||||
| IPP = 16 A, TLP, IO to GND | 10.4 | V | |||||
| IPP =1 A, TLP, GND to IO | 7.6 | V | |||||
| IPP =5 A, TLP, GND to IO | 8.2 | V | |||||
| IPP =16 A, TLP, GND to IO | 10.4 | V | |||||
| Clamping voltage with surge strike (4) | IPP = 6 A, tp = 8/20 μs , IO to GND | 9.5 | V | ||||
| IPP = 6 A, tp = 8/20 μs , GND to IO | 9.5 | V | |||||
| RDYN | Dynamic resistance (3) | IO to GND | 0.19 | Ω | |||
| GND to IO | |||||||
| CL | Line capacitance | VIO = 0 V; ? = 1 MHz, Vpp = 30 mV, IO to GND or IO to GND | 0.5 | pF | |||