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SNLS045C July 1999 – July 2016 DS90LV048A

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

PW|16
- MPDS361B
D|16
- MPDS178G

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

See ⁽¹⁾⁽²⁾

			MIN	MAX	UNIT
Supply voltage (V_CC)			–0.3	4	V
Input voltage (R_IN+, R_IN−)			–0.3	3.6	V
Enable input voltage (EN, EN*)			–0.3	V_CC + 0.3	V
Output voltage (R_OUT)			–0.3	V_CC + 0.3	V
Maximum package power dissipation at +25°C	D0016A package			1025	mW
	PW0016A package			866	mW
	Derate D0016A package	above +25°C		8.2	mW/°C
	Derate PW0016A package	above +25°C		6.9	mW/°C
Lead temperature soldering	(4 s)			260	°C
Maximum junction temperature				150	°C
Storage temperature, T_stg			–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge⁽¹⁾	Human-body model (HBM)	±10000	V
V_(ESD)	Electrostatic discharge⁽¹⁾	Machine model	±1200	V

(1) ESD Rating:
HBM (1.5 kΩ, 100 pF)
EIAJ (0 Ω, 200 pF)

6.3 Recommended Operating Conditions

	MIN	NOM	MAX	UNIT
Supply voltage, V_CC	3	3.3	3.6	V
Receiver input voltage	GND		3	V
Operating free air temperature, T_A	−40	25	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		DS90LV048A	UNIT
		PW (TSSOP)
		16 PINS
R_θJA	Junction-to-ambient thermal resistance	110.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	47	°C/W
R_θJB	Junction-to-board thermal resistance	54.7	°C/W
ψ_JT	Junction-to-top characterization parameter	6.1	°C/W
ψ_JB	Junction-to-board characterization parameter	54.2	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.⁽¹⁾⁽²⁾

PARAMETER		TEST CONDITIONS		PIN	MIN	TYP	MAX	UNIT
V_TH	Differential input high threshold	V_CM = +1.2 V, 0.05 V, 2.95 V⁽³⁾		R_IN+, R_IN−		−35	0	mV
V_TL	Differential input low threshold	V_CM = +1.2 V, 0.05 V, 2.95 V⁽³⁾			−100	−35		mV
VCMR	Common-mode voltage range	VID = 200 mV peak to peak?⁽⁴⁾			0.1		2.3	V
I_IN	Input current	V_IN = +2.8 V	V_CC = 3.6 V or 0 V		−10	±5	10	μA
		V_IN = 0 V	V_CC = 3.6 V or 0 V		−10	±1	10
		V_IN = +3.6 V	V_CC = 0 V		–20	±1	20
V_OH	Output high voltage	I_OH = −0.4 mA, V_ID = +200 mV		R_OUT	2.7	3.3		V
		I_OH = −0.4 mA, input terminated			2.7	3.3
		I_OH = −0.4 mA, input shorted			2.7	3.3
V_OL	Output low voltage	I_OL = 2 mA, V_ID = −200 mV				0.05	0.25	V
I_OS	Output short-circuit current	Enabled, V_OUT = 0 V⁽⁵⁾			−15	−47	−100	mA
I_OZ	Output TRI-STATE current	Disabled, V_OUT = 0 V or V_CC			−10	±1	10	μA
V_IH	Input high voltage			EN, EN*	2		V_CC	V
V_IL	Input low voltage				GND		0.8	V
I_I	Input current	V_IN = 0 V or V_CC, other Input = V_CC or GND			−10	±5	10	μA
V_CL	Input clamp voltage	I_CL = −18 mA			−1.5	−0.8		V
I_CC	No load supply current receivers enabled	EN = V_CC, inputs open		V_CC		9	15	mA
I_CCZ	No load supply current receivers disabled	EN = GND, inputs open		V_CC		1	5	mA

(1) Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise specified.

(2) All typicals are given for: V_CC = 3.3 V, T_A = 25°C.

(3) V_CC is always higher than R_IN+ and R_IN− voltage. R_IN− and R_IN+ are allowed to have a voltage range −0.2 V to V_CC− VID/2. However, to be compliant with AC specifications, the common voltage range is 0.1 V to 2.3 V.

(4) The VCMR range is reduced for larger VID. Example: if VID = 400 mV, the VCMR is 0.2 V to 2.2 V. The fail-safe condition with inputs shorted is not supported over the common-mode range of 0 V to 2.4 V, but is supported only with inputs shorted and no external common-mode voltage applied. A VID up to V_CC – 0 V may be applied to the R_IN+/ R_IN− inputs with the Common-Mode voltage set to V_CC/2. Propagation delay and Differential Pulse skew decrease when VID is increased from 200 mV to 400 mV. Skew specifications apply for 200 mV ≤ VID ≤ 800 mV over the common-mode range.

(5) Output short-circuit current (I_OS) is specified as magnitude only; minus sign indicates direction only. Only one output should be shorted at a time; do not exceed maximum junction temperature specification.

6.6 Switching Characteristics

Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.⁽¹⁾⁽²⁾⁽⁴⁾⁽⁵⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
t_PHLD	Differential propagation delay high to low	C_L = 15 pF V_ID = 200 mV (Figure 15 and Figure 16)	1.2	2	2.7	ns
t_PLHD	Differential propagation delay low to high		1.2	1.9	2.7	ns
t_SKD1	Differential pulse skew \|t_PHLD − t_PLHD\|⁽³⁾		0	0.1	0.4	ns
t_SKD2	Differential channel-to-channel skew; same device⁽⁴⁾		0	0.15	0.5	ns
t_SKD3	Differential part-to-part skew⁽⁵⁾				1	ns
t_SKD4	Differential part-to-part skew⁽⁶⁾				1.5	ns
t_TLH	Rise time			0.5	1	ns
t_THL	Fall time			0.35	1	ns
t_PHZ	Disable time high to Z	R_L = 2 kΩ C_L = 15 pF (Figure 17 and Figure 18)		8	14	ns
t_PLZ	Disable time low to Z			8	14	ns
t_PZH	Enable time Z to high			9	14	ns
t_PZL	Enable time Z to low			9	14	ns
f_MAX	Maximum operating frequency⁽⁷⁾	All channels switching	200	250		MHz

(1) All typicals are given for: V_CC = 3.3 V, T_A = 25°C.

(2) Generator waveform for all tests unless otherwise specified: f = 1 MHz, Z_O = 50 Ω, t_r and t_f (0% to 100%) ≤ 3 ns for R_IN.

(3) t_SKD1 is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of the same channel

(4) t_SKD2, channel-to-channel skew is defined as the difference between the propagation delay of one channel and that of the others on the same chip with any event on the inputs.

(5) t_SKD3, part-to-part skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices at the same V_CC, and within 5°C of each other within the operating temperature range.

(6) t_SKD4, part-to-part skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices over recommended operating temperature and voltage ranges, and across process distribution. t_SKD4 is defined as |Max−Min| differential propagation delay.

(7) f_MAX generator input conditions: t_r = t_f < 1 ns (0% to 100%), 50% duty cycle, differential (1.05-V to 1.35-V peak to peak). Output criteria: 60 / 40% duty cycle, V_OL (maximum 0.4 V), V_OH (minimum 2.7 V), Load = 15 pF (stray plus probes).