ZHCSBO3F October 2013 – January 2022 CSD25483F4
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = –250 μA | –20 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –16 V | –100 | nA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –12 V | –50 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = –250 μA | –0.70 | –0.95 | –1.2 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –1.8 V, IDS = –0.1 A | 530 | 1070 | m? | ||
| VGS = –2.5 V, IDS = –0.5 A | 338 | 390 | m? | ||||
| VGS = –4.5 V, IDS = –0.5 A | 210 | 245 | m? | ||||
| VGS = –8 V, IDS = –0.5 A | 175 | 205 | m? | ||||
| gfs | Transconductance | VDS = –10 V, IDS = –0.5 A | 1.4 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0 V, VDS = –10 V, ? = 1 MHz | 198 | pF | |||
| Coss | Output Capacitance | 82 | pF | ||||
| Crss | Reverse Transfer Capacitance | 5.8 | pF | ||||
| RG | Series Gate Resistance | 20 | ? | ||||
| Qg | Gate Charge Total (4.5 V) | VDS = –10 V, IDS = –0.5 A | 959 | pC | |||
| Qgd | Gate Charge Gate-to-Drain | 160 | pC | ||||
| Qgs | Gate Charge Gate-to-Source | 252 | pC | ||||
| Qg(th) | Gate Charge at Vth | 122 | pC | ||||
| Qoss | Output Charge | VDS = –10 V, VGS = 0 V | 1081 | pC | |||
| td(on) | Turn On Delay Time | VDS = –10 V, VGS = –4.5 V, IDS = –0.5 A,RG = 2 ? | 4.3 | ns | |||
| tr | Rise Time | 3.7 | ns | ||||
| td(off) | Turn Off Delay Time | 17.4 | ns | ||||
| tf | Fall Time | 7 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = –0.5 A, VGS = 0 V | –0.75 | V | |||
| Qrr | Reverse Recovery Charge | VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs | 1060 | pC | |||
| trr | Reverse Recovery Time | 7.5 | ns | ||||