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SCAS793G June 2005 – August 2017 CDCM7005

PRODUCTION DATA.

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGZ|48
ZVA|64

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

RGZ|48
- QFND014T

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_CC, A_VCC, V_{CC_CP}	Supply voltage ⁽²⁾	–0.5	4.6	V
V_I	Input voltage ⁽³⁾	–0.5	V_CC + 0.5	V
V_O	Output voltage ⁽³⁾	–0.5	V_CC + 0.5	V
I_OUT	Output current for LVPECL/LVCMOS outputs (0 < V_O < V_CC)		±50	mA
I_IN	Input current (V_I < 0, V_I > V_CC)		±20	mA
T_J	Maximum junction temperature		125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All supply voltages have to be supplied at the same time.

(3) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2500	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

		MIN	NOM	MAX	UNIT
V_CC, AV_CC	Supply voltage	3	3.3	3.6	V
V_{CC_CP}	Supply voltage	2.3		V_CC	V
V_IL	Low-level input voltage LVCMOS, see ⁽²⁾			0.3 V_CC	V
V_IH	High-level input voltage LVCMOS, see ⁽²⁾	0.7 V_CC			V
I_OH	High-level output current LVCMOS (includes all status pins)			–8	mA
I_OL	Low-level output current LVCMOS (includes all status pins)			8	mA
V_I	Input voltage range LVCMOS	0		3.6	V
V_INPP	Input amplitude LVPECL (V_{VCXO_IN} – V_{VCXO_IN})⁽¹⁾	0.5		1.3	V
V_IC	Common-mode input voltage LVPECL	1		V_CC–0.3	V
T_A	Operating free-air temperature	–40		85	°C

(1) V_INPP minimum and maximum is required to maintain ac specifications; the actual device function tolerates at a minimum V_INPP
of 150 mV.

(2) V_IL and V_IH are required to maintain ac specifications; the actual device function tolerates a smaller input level of 1V, if an ac-coupling to V_CC/2 is provided.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		RGZ AIRFLOW (lfm)	ZVA AIRFLOW (m/s)	CDCM7005		UNIT
				RGZ (VQFN)	ZVA (BGA)
				48 PINS	64 PINS
R_θJA	Junction-to-ambient thermal resistance	0	0	29.9	53.9	°C/W
		150	1	24.7	49.8
		250	2	23.2	48.5
		500	–	21.5	–
R_θJC(top)	Junction-to-case (top) thermal resistance			22.4	28.3	°C/W
R_θJB	Junction-to-board thermal resistance			14.2	38.6	°C/W
ψ_JT	Junction-to-top characterization parameter	0	0	0.2	0.7	°C/W
		150	1	0.2	0.7
		250	2	0.2	0.8
		500	–	0.3	–
ψ_JB	Junction-to-board characterization parameter			–	–	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance					°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP⁽¹⁾	MAX	UNIT
OVERALL
I_{CC_LVPECL}	Supply current (I_CC over frequency see Figure 1 through Figure 4)	f_VCXO = 245.76 MHz, f_{REF_IN} = 30.72 MHz, PFD = 240 kHz, I_CP = 2 mA, all outputs are LVPECL and Div-by-8 (load, see Figure 13)		210	260	mA
I_{CC_LVCMOS}		f_VCXO = 245.76 MHz, f_{REF_IN} = 30.72 MHz, PFD = 240 kHz, I_CP = 2 mA, All outputs are LVCMOS and Div-by-8 (load, 10 pF)		120	150	mA
I_CCPD	Power-down current	f_IN = 0 MHz, V_CC = 3.6 V, AV_CC = 3.6 V, V_{CC_CP} = 3.6 V, V_I = 0 V or V_CC		100	300	µA
I_OZ	High-impedance state output current for Yx outputs	V_O = 0 V or V_CC – 0.8 V			±40	µA
I_OZ	High-impedance state output current for Yx outputs	V_O = 0 V or V_CC			±100	µA
V_{I_REF_CP}	Voltage on I_REF_CP (external current path for accurate charge pump current)	12 kΩ to GND at pin D8 (BGA), pin 22 (QFN)		1.21		V
V_BB	Output reference voltage	V_CC = 3 V – 3.6 V; I_BB = –0.2 mA		V_CC–1.3		V
C_O	Output capacitance for Yx	V_CC = 3.3 V, V_O = 0 V or V_CC		2		pF
C_I	Input capacitance at PRI_REF and SEC_REF	V_I = 0 V or V_CC, V_I = 0 V or V_CC		2.7		pF
C_I	Input capacitance at CTRL_LE, CTRL_CLOCK, CTRL_DATA	V_I = 0 V or V_CC		2		pF
LVCMOS
f_clk	Output frequency, see ⁽²⁾, ⁽³⁾, Figure 6, and Figure 7	Load = 5 pF to GND, 1 kΩ to V_CC, 1 kΩ to GND			250	MHz
V_IK	LVCMOS input clamp voltage	V_CC = 3 V, I_I = –18 mA			–1.2	V
I_I	LVCMOS input current for CTRL_LE, CTRL_CLK, CTRL_DATA	V_I = 0 V or V_CC, V_CC = 3.6 V			±5	µA
I_IH	LVCMOS input current for PD, RESET, HOLD, REF_SEL, PRI_REF, SEC_REF, (see ⁽⁴⁾)	V_I = V_CC, V_CC = 3.6 V			5	µA
I_IL	LVCMOS input current for PD, RESET, HOLD, REF_SEL, PRI_REF, SEC_REF, (see ⁽⁴⁾)	V_I = 0 V, V_CC = 3.6 V	–15		–35	µA
V_OH	High-level output voltage for LVCMOS outputs	V_CC = min to max, I_OH = –100 μA	V_CC–0.1			V
		V_CC = 3 V, I_OH = –6 mA	2.4
		V_CC = 3 V, I_OH = –12 mA	2
V_OL	Low-level output voltage for LVCMOS outputs	V_CC = min to max, I_OL = 100 μA			0.1	V
		V_CC = 3 V, I_OL = 6 mA			0.5
		V_CC = 3 V, I_OL = 12 mA			0.8
I_OH	High-level output current	V_CC = 3.3 V, V_O = 1.65 V		–30		mA
I_OL	Low-level output current	V_CC = 3.3 V, V_O = 1.65 V		33		mA
tpho	Phase offset (REF_IN to Y output)⁽⁶⁾	VREF_IN = V_CC/2, Y = V_CC/2, see Figure 11, Load = 10 pF		1.8		ns
t_sk(p)	LVCMOS pulse skew, see Figure 10	Crosspoint to V_CC/2 load, see Figure 12			150	ps
t_pd(LH)	Propagation delay from VCXO_IN to Yx, see Figure 10	Crosspoint to V_CC/2, Load = 10 pF, see Figure 12 (PLL bypass mode)	2	2.5	3	ns
t_pd(HL)	Propagation delay from VCXO_IN to Yx, see Figure 10		2	2.5	3	ns
t_sk(o)	LVCMOS single-ended output skew, see ⁽⁷⁾ and Figure 10	All outputs have the same divider ratio			55	ps
t_sk(o)	LVCMOS single-ended output skew, see ⁽⁷⁾ and Figure 10	Outputs have different divider ratios			70	ps
Duty cycle	LVCMOS	V_CC/2 to V_CC/2	49%		51%
t_slew-rate	Output rise/fall slew rate	20% to 80% of swing (load see Figure 12)	2.4	3.5		V/ns
LVPECL
f_clk	Output frequency, see ⁽³⁾ and Figure 5	Load, see Figure 13	0		1500	MHz
I_I	LVPECL input current	V_I = 0 V or V_CC			±20	µA
V_OH	LVPECL high-level output voltage	Load, See Figure 13	V_CC–1.18		V_CC–0.81	V
V_OL	LVPECL low-level output voltage	Load, See Figure 13	V_CC–2		V_CC–1.55	V
\|V_OD\|	Differential output voltage	See Figure 9 and load, see Figure 13	500			mV
t_pho	Phase offset (REF_IN to Y output)⁽⁷⁾	VREF_IN = V_CC/2 to cross point of Y, see Figure 11	–200		100	ps
t_pd(LH)	Propagation delay time, VCXO_IN to Yx, see Figure 10	Cross point-to-cross point, load see Figure 13	340	490	640	ps
t_pd(HL)	Propagation delay time, VCXO_IN to Yx, see Figure 10	Cross point-to-cross point, load see Figure 13	340	490	640	ps
t_sk(p)	LVPECL pulse skew, see Figure 10	Cross point-to-cross point, load see Figure 13			10	ps
t_sk(o)	LVPECL output skew⁽⁷⁾	Load see Figure 13, all outputs have the same divider ratio			20	ps
t_sk(o)	LVPECL output skew⁽⁷⁾	Load see Figure 13, outputs have different divider ratios			50	ps
t_r / t_f	Rise and fall time	20% to 80% of V_OUTPP, see Figure 9	120	170	220	ps
C_I	Input capacitance at VCXO_IN, VCXO_IN			1.5		pF
LVCMOS-TO-LVPECL
t_{sk(P_C)}	Output skew between LVCMOS and LVPECL outputs, see ⁽⁸⁾ and Figure 10	Cross point to V_CC/2; load, see Figure 12 and Figure 13	1.7	2	2.4	ns
PLL ANALOG LOCK
I_OH	High-level output current	V_CC = 3.6 V, V_O = 1.8 V		–110		µA
I_OL	Low-level output current	V_CC = 3.6 V, V_O = 1.8 V		110		µA
I_{OZH LOCK}	High-impedance state output current for PLL LOCK output⁽⁵⁾	V_O = 3.6 V (PD is set low)		45	65	µA
I_{OZL LOCK}	High-impedance state output current for PLL LOCK output⁽⁵⁾	V_O = 0 V (PD is set low)			±5	µA
V_IT+	Positive input threshold voltage	V_CC = min to max		V_CC×0.55		V
V_IT–	Negative input threshold voltage	V_CC = min to max		V_CC×0.35		V
PHASE DETECTOR
f_CPmax	Maximum charge pump frequency	Default PFD pulse width delay			100	MHz
CHARGE PUMP
I_CP	Charge pump sink/source current range ⁽⁹⁾	V_CP = 0.5 V_{CC_CP}	±0.2		±3	mA
I_CP3St	Charge pump 3-state current	0.5 V < V_CP < V_{CC_CP} – 0.5 V			10	nA
I_CPA	ICP absolute accuracy	V_CP = 0.5 V_{CC_CP}, internal reference resistor, SPI default settings		10%
I_CPA	ICP absolute accuracy	V_CP = 0.5 V_{CC_CP}, external reference resistor 12 kΩ (1%) at I_REF_CP, SPI default settings		5%
I_CPM	Sink/source current matching	0.5 V < V_CP < V_{CC_CP} – 0.5 V, SPI default settings		2.5%
I_VCPM	ICP vs VCP matching	0.5 V < V_CP < V_{CC_CP} – 0.5 V		5%

(1) All typical values are at V_CC = 3.3 V, temperature = 25°C.

(2) f_clk can be up to 400 MHz in the typical operating mode (25°C / 3.3-V V_CC). The total power consumption limit of 700 mW for the BGA package can be violated if several LVCMOS outputs switch at high frequency (see Figure 3 and Figure 4).

(3) Operating the LVCMOS or LVPECL output above the maximum frequency will not cause a malfunction to the device, but the output signal swing may no longer meet the output specification.

(4) These inputs have an internal 150-kΩ pullup resistor.

(5) Lock output has an 80-kΩ pulldown resistor.

(6) This is valid only for the same frequency of REF_IN clock and Y output clock. It can be adjusted by the SPI controller (reference delay M and VCXO delay N).

(7) The t_sk(o) specification is only valid for equal loading of all outputs.

(8) The phase of LVCMOS is lagging in reference to the phase of LVPECL.

(9) Defined by SPI settings.

7.6 Timing Requirements

over recommended ranges of supply voltage, load and operating free air temperature

		MIN	MAX	UNIT
PRI_REF/SEC_REF_IN REQUIREMENTS
f_{REF_IN}	LVCMOS primary or secondary reference clock frequency⁽¹⁾ ⁽⁴⁾	0	200	MHz
t_r/ t_f	Rise and fall time of PRI_REF or SEC_REF signals from 20% to 80% of V_CC		4	ns
dutyREF	Duty cycle of PRI_REF or SEC_REF at V_CC/2	40%	60%
VCXO_IN, VCXO_IN REQUIREMENTS
f_{VCXO_IN}	VCXO clock frequency⁽²⁾	0	2200	MHz
t_r/ t_f	Rise and fall time 20% to 80% of VINPP at 80 MHz to 800 MHz⁽³⁾		3	ns
dutyVCXO	Duty cycle of VCXO clock	40%	60%
SPI/CONTROL REQUIREMENTS (see Figure 23)
f_{CTRL_CLK}	CTRL_CLK frequency		20	MHz
t_su1	CTRL_DATA to CTRL_CLK setup time	10		ns
t_h2	CTRL_DATA to CTRL_CLK hold time	10		ns
t₃	CTRL_CLK high duration	25		ns
t₄	CTRL_CLK low duration	25		ns
t_su5	CTRL_LE to CTRL_CLK setup time	10		ns
t_su6	CTRL_CLK to CTRL_LE setup time	10		ns
t₇	CTRL_LE pulse width	20		ns
t_r/ t_f	Rise and fall time of CTRL_DATA CTRL_CLK, CTRL_LE from 20% to 80% of V_CC		4	ns
PD, RESET, HOLD, REF_SEL REQUIREMENTS
t_r / t_f	Rise and fall time of the PD, RESET, HOLD, REF_SEL signal from 20% to 80% of V_CC		4	ns

(1) At Reference Clock less than 2 MHz, the device stays in normal operation mode but the frequency detection circuitry resets the STATUS_REF signal to low. In this case, the status of the STATUS_REF is no longer relevant.

(2) If the Feedback Clock (derives from VCXO input) is less than 2 MHz, the device stays in normal operation mode but the frequency detection circuitry resets the STATUS_VCXO signal and PLL_LOCK signal to low. Both status signals are no longer relevant. This effects the HOLD-over function as well, as the PLL_LOCK signal is no longer valid!

(3) Use a square wave for lower frequencies (< 80 MHz).

(4) f_{REF_IN} can be up to 250 MHz in typical operating mode (25°C / 3.3-V V_CC).

7.7 Typical Characteristics

If div-by-2/4/8/16 is activated for one or more outputs, 'Δ for div-by-2/4/8/16' has to be added to I_CC of div-by-1. If div-by-3 or div-by-6 is activated, 'Δ for div-by-2/4/8/16' and 'Δ for div-by3/6' has to be added to I_CC of div-by-1.

Figure 1. LVPECL Supply Current vs Number of Active Outputs

To estimate I_CC with different P-divider settings use 'Δ for div-by-2/4/8/16' and 'Δ for div-by-3/6' of Figure 1.

It is not recommended to exceed power dissipation of 700 mW for the BGA package at T_A 85°C.

Figure 3. LVCMOS Supply Current and Device Power Consumption vs Number of Active Outputs (Load = 5 pF)

Figure 5. Differential LVPECL Output Voltage vs Output Frequency

Figure 7. LVCMOS Output Swing vs Frequency

Figure 2. LVPECL Device Power Consumption vs Number of Active Outputs

To estimate I_CC with different P-divider settings use 'Δ for div-by-2/4/8/16' and 'Δ for div-by-3/6' of Figure 1.

It is not recommended to exceed power dissipation of 700 mW for the BGA package at T_A 85°C.

Figure 4. LVCMOS Supply Current and Device Power Consumption vs Number of Active Outputs (Load = 10 pF)

Figure 6. LVCMOS Output Swing vs Frequency

Figure 8. Output Reference Voltage (VBB) vs Load