ZHCSQV5B November 1998 – July 2022 CD54HC245 , CD54HCT245 , CD74HC245 , CD74HCT245
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS(1) | VCC(V) | 25°C | -40°C to 85°C | -55°C to 125°C | UNIT | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MIN | TYP | MAX | MIN | MAX | MIN | MAX | ||||||
| HC TYPES | ||||||||||||
| VIH | High-level input voltage | 2 | 1.5 | 1.5 | 1.5 | V | ||||||
| 4.5 | 3.15 | 3.15 | 3.15 | V | ||||||||
| 6 | 4.2 | 4.2 | 4.2 | V | ||||||||
| VIL | Low-level input voltage | 2 | 0.5 | 0.5 | 0.5 | V | ||||||
| 4.5 | 1.35 | 1.35 | 1.35 | V | ||||||||
| 6 | 1.8 | 1.8 | 1.8 | V | ||||||||
| VOH | High-level output voltage CMOS loads |
IOH = – 20 μA | 2 | 1.9 | 1.9 | 1.9 | V | |||||
| IOH = – 20 μA | 4.5 | 4.4 | 4.4 | 4.4 | V | |||||||
| IOH = – 20 μA | 6 | 5.9 | 5.9 | 5.9 | V | |||||||
| High-level output voltage TTL loads |
IOH = – 4 mA | 4.5 | 3.98 | 3.84 | 3.7 | V | ||||||
| IOH = – 5.2 mA | 6 | 5.48 | 5.48 | 5.2 | V | |||||||
| VOL | Low-level output voltage CMOS loads |
IOL = 20 μA | 2 | 0.1 | 0.1 | 0.1 | V | |||||
| IOL = 20 μA | 4.5 | 0.1 | 0.1 | 0.1 | V | |||||||
| IOL = 20 μA | 6 | 0.1 | 0.1 | 0.1 | V | |||||||
| Low-level output voltage TTL |
IOL = 4 mA | 4.5 | 0.26 | 0.33 | 0.4 | V | ||||||
| IOL = 5.2 mA | 6 | 0.26 | 0.33 | 0.4 | V | |||||||
| II | Input leakage current | VI = VCC or GND | 6 | ±0.1 | ±1 | ±1 | μA | |||||
| ICC | Quiescent device current | VI = VCC or GND | 6 | 8 | 80 | 160 | μA | |||||
| IOZ | Three-state leakage current | VO = VCC or GND | 6 | ±0.5 | ±5 | ±10 | μA | |||||
| HCT TYPES | ||||||||||||
| VIH | High-level input voltage | 4.5 to 5.5 | 2 | 2 | 2 | V | ||||||
| VIL | Low-level input voltage | 4.5 to 5.5 | 0.8 | 0.8 | 0.8 | V | ||||||
| VOH | High-level
output voltage CMOS loads |
IOH = – 20 μA | 4.5 | 4.4 | 4.4 | 4.4 | V | |||||
| High-level
output voltage TTL |
IOH = – 4 mA | 4.5 | 3.98 | 3.84 | 3.7 | V | ||||||
| VOL | Low-level
output voltage CMOS |
IOL = 20 μA | 4.5 | 0.1 | 0.1 | 0.1 | V | |||||
| Low-level
output voltage TTL |
IOH = 4 mA | 4.5 | 0.26 | 0.33 | 0.4 | V | ||||||
| II | Input leakage current | VI = VCC and GND | 5.5 | ±0.1 | ±1 | ±1 | μA | |||||
| ICC | Quiescent device current | VI = VCC and GND | 5.5 | 8 | 80 | 160 | μA | |||||
| IOZ | Three-state leakage current | VO = VCC or GND | 6 | ±0.5 | ±5 | ±10 | μA | |||||
| ?ICC(1) | Additional quiescent device current per input pin | An or Bn input held at VCC – 2.1 V | 4.5 to 5.5 | 100 | 144 | 180 | 196 | μA | ||||
| OE input held at VCC – 2.1 V | 4.5 to 5.5 | 100 | 540 | 675 | 735 | μA | ||||||
| DIR input held at VCC – 2.1 V | 4.5 to 5.5 | 100 | 324 | 405 | 441 | μA | ||||||