久久永久免费视频,日本精品久久久久中文字幕

SBASAR7 September 2025 AMC0300D

PRODMIX

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DWV|8
- MPDS382B

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.13 Electrical Characteristics

minimum and maximum specifications apply from T_A = –40°C to +125°C, VDD1 = 3.0V to 5.5V, VDD2 = 3.0V to 5.5V, V_INP = –250mV to +250mV, and V_INN = 0V; typical specifications are at T_A = 25°C, VDD1 = 5V, and VDD2 = 3.3V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
ANALOG INPUT
C_IN	Effective input sampling capacitance			1.8		pF
R_IN	Input impedance		25	27.5	30	kΩ
I_INP	Input current	V_IN = (V_INP – V_INN) = V_{FSR, MAX}		9		μA
I_INN	Input current	V_IN = (V_INP – V_INN) = V_{FSR, MAX}		–9		μA
CMTI	Common-mode transient immunity	\|GND1 – GND2\| = 1kV	150			V/ns
ANALOG OUTPUT
	Nominal gain			8.2		V/V
V_CMout	Common-mode output voltage		1.39	1.44	1.49	V
V_CLIPout	Clipping differential output voltage	V_OUT = (V_OUTP – V_OUTN); \|V_IN\| = \|V_INP – V_INN\| > \|V_Clipping\|	–2.52	±2.49	2.52	V
V_FAILSAFE	Failsafe differential output voltage	VDD1 missing	–2.63	–2.57	2.53	V
R_OUT	Output resistance	On OUTP or OUTN		<0.2		Ω
	Output short-circuit current	On OUTP or OUTN, sourcing or sinking, INN = INP = GND1, outputs shorted to either GND2 or VDD2		11		mA
DC ACCURACY
V_OS	Offset voltage⁽¹⁾⁽²⁾	T_A = 25°C, INP = INN = GND1	–0.2	±0.01	0.2	mV
TCV_OS	Offset drift⁽¹⁾⁽²⁾⁽⁴⁾		–2	±0.25	2	μV/°C
E_G	Gain error⁽¹⁾	T_A = 25°C	–0.25%	±0.04%	0.25%
TCE_G	Gain drift⁽¹⁾⁽⁵⁾		–35	±5	35	ppm/°C
	Nonlinearity		–0.04%		0.04%
	Output noise	INP = INN = GND1, f_IN = 0Hz, BW = 100kHz brickwall filter		400		μV_RMS
CMRR	Common-mode rejection ratio	f_IN = 0Hz, V_{CM min} ≤ V_CM ≤ V_{CM max}		–100		dB
CMRR	Common-mode rejection ratio	f_IN = 10kHz, V_{CM min} ≤ V_CM ≤ V_{CM max}		–87		dB
PSRR	Power-supply rejection ratio⁽²⁾	VDD1 DC PSRR, INP = INN = GND1, VDD1 from 3V to 5.5V		–89		dB
		VDD1 AC PSRR, INP = INN = GND1, VDD1 with 10kHz / 100mV ripple		–79
		VDD2 DC PSRR, INP = INN = GND1, VDD2 from 3V to 5.5V		–110
		VDD2 AC PSRR, INP = INN = GND1, VDD2 with 10kHz / 100mV ripple		–79
AC ACCURACY
BW	Output bandwidth		250	280		kHz
THD	Total harmonic distortion⁽³⁾	f_IN = 10kHz		–82		dB
SNR	Signal-to-noise ratio	f_IN = 1kHz, BW = 10kHz	80.5	85		dB
SNR	Signal-to-noise ratio	f_IN = 10kHz, BW = 100kHz		77		dB
POWER SUPPLY
IDD1	High-side supply current			5.4	6.7	mA
IDD2	Low-side supply current			6.4	9.9	mA
VDD1_UV	High-side undervoltage detection threshold	VDD1 rising	2.5	2.6	2.7	V
VDD1_UV	High-side undervoltage detection threshold	VDD1 falling	1.9	2.0	2.1	V
VDD2_UV	Low-side undervoltage detection threshold	VDD2 rising	2.3	2.5	2.7	V
VDD2_UV	Low-side undervoltage detection threshold	VDD2 falling	1.9	2.05	2.2	V

(1) The typical value includes one standard deviation (sigma) at nominal operating conditions.

(2) This parameter is input referred.

(3) THD is the ratio of the rms sum of the amplitues of first five higher harmonics to the amplitude of the fundamental.

(4) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCV_OS = (V_OS,MAX - V_OS,MIN) / TempRange where V_OS,MAX and V_OS,MIN refer to the maximum and minimum V_OS values measured within the temperature range (–40 to 125℃).

(5) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCE_G (ppm) = ((E_G,MAX - E_G,MIN) / TempRange) x 10⁴ where E_G,MAX and E_G,MIN refer to the maximum and minimum E_G values (in %) measured within the temperature range (–40 to 125℃).