TPSI2240-Q1
具有增強隔離和雪崩防護(hù)功能的汽車級 1200V、50mA 隔離開關(guān)
TPSI2240-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2240-Q1 IAVA = 1mA for 60s pulses
- TPSI2240T-Q1 IAVA = 3mA for 60s pulses
- 1200V standoff voltage
- RON = 130Ω (TJ = 25°C)
- TON, TOFF < 700μs
- IOFF = 1.22μA at 1000V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5mA ON state current
- 3.5μA OFF state current (TJ = 25°C)
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1000VRMS / 1500VDC working voltage
- Reinforced Isolation rating, VISO, up to 3750VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TIs high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFETs avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA without requiring any external components.
技術(shù)文檔
| 類型 | 標(biāo)題 | 下載最新的英語版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection 數(shù)據(jù)表 | PDF | HTML | 2025年 9月 26日 | ||
| EVM 用戶指南 | TPSI2240-Q1 評估模塊 | PDF | HTML | 英語版 | PDF | HTML | 2025年 10月 23日 | |
| 證書 | TPSI2240Q1EVM EU Declaration of Conformity (DoC) | 2025年 7月 1日 |
設(shè)計和開發(fā)
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TPSI2240Q1EVM — TPSI2240-Q1 評估模塊
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| 封裝 | 引腳 | CAD 符號、封裝和 3D 模型 |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
訂購和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識
- 引腳鍍層/焊球材料
- MSL 等級/回流焊峰值溫度
- MTBF/時基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測
- 制造廠地點
- 封裝廠地點
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