SM72482
- Renewable Energy Grade
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A Sink, 3A Source Current Capability
- Two Channels Can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
- Available in Dual Noninverting, Dual Inverting, and Combination Configurations
- Supply Rail Under-Voltage Lockout Protection (UVLO)
- SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
- Packages
- SOIC
- Thermally Enhanced VSSOP
All trademarks are the property of their respective owners.
The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
技術(shù)文檔
| 類型 | 標(biāo)題 | 下載最新的英語(yǔ)版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | SM72482 Dual 5A Compound Gate Driver 數(shù)據(jù)表 (Rev. C) | 2013年 4月 1日 | |||
| 應(yīng)用手冊(cè) | Improving Efficiency of DC-DC Conversion through Layout | 2019年 5月 7日 | ||||
| 應(yīng)用簡(jiǎn)報(bào) | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019年 1月 18日 | ||||
| 應(yīng)用簡(jiǎn)報(bào) | High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) | 2018年 11月 26日 | ||||
| 更多文獻(xiàn)資料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
| 更多文獻(xiàn)資料 | MOSFET 和 IGBT 柵極驅(qū)動(dòng)器電路的基本原理 | 最新英語(yǔ)版本 (Rev.A) | 2018年 4月 17日 | |||
| 應(yīng)用簡(jiǎn)報(bào) | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018年 3月 16日 |
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PMP9461 — 適用于光伏微型逆變器直流/直流和直流/交流塊的柵極驅(qū)動(dòng)和輔助電源解決方案參考設(shè)計(jì)
| 封裝 | 引腳 | CAD 符號(hào)、封裝和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
訂購(gòu)和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識(shí)
- 引腳鍍層/焊球材料
- MSL 等級(jí)/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測(cè)
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)
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