TVS-RECOMMENDATION-CALC — TVS diode recommendation tool
支持的產(chǎn)品和硬件
此設(shè)計(jì)資源支持這些類別中的大部分產(chǎn)品。
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parametric-filter 電子保險(xiǎn)絲和熱插拔控制器
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.
Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
| 類型 | 標(biāo)題 | 下載最新的英語(yǔ)版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | LM9061 and LM9061-Q1 High-Side Protection Controller 數(shù)據(jù)表 (Rev. I) | PDF | HTML | 2017年 1月 4日 | ||
| 電子書 | 11 Ways to Protect Your Power Path | 2019年 7月 3日 | ||||
| EVM 用戶指南 | LM9061 High-Side Protection Controller EVM | 2014年 11月 7日 |
如需其他信息或資源,請(qǐng)點(diǎn)擊以下任一標(biāo)題進(jìn)入詳情頁(yè)面查看(如有)。
LM9061EVM 評(píng)估模塊演示的是接電負(fù)載的高側(cè)保護(hù),用于防護(hù)過(guò)流和過(guò)壓的情況。高側(cè) MOSFET 的柵極驅(qū)動(dòng)由一個(gè)開/關(guān)輸入控制。過(guò)流保護(hù)會(huì)在從 MOSFET 中監(jiān)測(cè)到壓降 (VDS) 時(shí)啟用,壓降參考的是外部可編程閾值電壓。如果 VDS 電壓因過(guò)高的負(fù)載電流而超出閾值電壓,MOSFET 的柵極驅(qū)動(dòng)就會(huì)關(guān)閉,從而斷開負(fù)載與輸入電源的連接。與負(fù)載串聯(lián)的電流感應(yīng)電阻器并非保護(hù)電路所必需,這樣可以在較高的電流負(fù)載下獲得更高的性能。
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| 封裝 | 引腳 | CAD 符號(hào)、封裝和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
推薦產(chǎn)品可能包含與 TI 此產(chǎn)品相關(guān)的參數(shù)、評(píng)估模塊或參考設(shè)計(jì)。
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TVS diode recommendation tool
Initial release of TVS diode recommendation tool.