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LM9061-Q1

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汽車類 7V 至 26V 高側(cè)保護(hù)控制器

產(chǎn)品詳情

FET External Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Automotive Soft start Adjustable Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
FET External Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Automotive Soft start Adjustable Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
SOIC (D) 8 29.4 mm2 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

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類型 標(biāo)題 下載最新的英語(yǔ)版本 日期
* 數(shù)據(jù)表 LM9061 and LM9061-Q1 High-Side Protection Controller 數(shù)據(jù)表 (Rev. I) PDF | HTML 2017年 1月 4日
電子書 11 Ways to Protect Your Power Path 2019年 7月 3日
EVM 用戶指南 LM9061 High-Side Protection Controller EVM 2014年 11月 7日

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評(píng)估板

LM9061EVM — LM9061EVM 高側(cè)保護(hù)控制器評(píng)估模塊

LM9061EVM 評(píng)估模塊演示的是接電負(fù)載的高側(cè)保護(hù),用于防護(hù)過(guò)流和過(guò)壓的情況。高側(cè) MOSFET 的柵極驅(qū)動(dòng)由一個(gè)開/關(guān)輸入控制。過(guò)流保護(hù)會(huì)在從 MOSFET 中監(jiān)測(cè)到壓降 (VDS) 時(shí)啟用,壓降參考的是外部可編程閾值電壓。如果 VDS 電壓因過(guò)高的負(fù)載電流而超出閾值電壓,MOSFET 的柵極驅(qū)動(dòng)就會(huì)關(guān)閉,從而斷開負(fù)載與輸入電源的連接。與負(fù)載串聯(lián)的電流感應(yīng)電阻器并非保護(hù)電路所必需,這樣可以在較高的電流負(fù)載下獲得更高的性能。

用戶指南: PDF
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參考設(shè)計(jì)

PMP9498 — 具有過(guò)流和過(guò)壓關(guān)斷功能的汽車類電池反向保護(hù)參考設(shè)計(jì)

PMP9498 是一套完整的前端保護(hù)解決方案,適用于需要反向電壓、過(guò)壓或過(guò)流保護(hù)的汽車系統(tǒng)。它還實(shí)現(xiàn)了負(fù)載開關(guān)功能,能夠以數(shù)字方式控制負(fù)載與輸入電源的連接和斷開。該設(shè)計(jì)可滿足汽車應(yīng)用在關(guān)閉期間的低 Iq 要求,并且采用了強(qiáng)大的柵極電流源(典型值 30mA),可驅(qū)動(dòng)大功率 MOSFET,因此適合高電流應(yīng)用。
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