LM9061
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
- Withstands 60-V Supply Transients
- Overvoltage Shut-OFF With VCC > 30 V
- Lossless Overcurrent Protection Latch-OFF
- Current Sense Resistor is Not Required
- Minimizes Power Loss With High Current Loads
- Programmable Delay of Protection Latch-OFF
- Gradual Turnoff to Minimize Inductive Load Transient Voltages
- CMOS Logic-Compatible ON and OFF Control Input
The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.
Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
技術(shù)文檔
| 類型 | 標(biāo)題 | 下載最新的英語版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | LM9061 and LM9061-Q1 High-Side Protection Controller 數(shù)據(jù)表 (Rev. I) | PDF | HTML | 2017年 1月 4日 | ||
| 電子書 | 11 Ways to Protect Your Power Path | 2019年 7月 3日 | ||||
| EVM 用戶指南 | LM9061 High-Side Protection Controller EVM | 2014年 11月 7日 |
設(shè)計和開發(fā)
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LM9061EVM — LM9061EVM 高側(cè)保護控制器評估模塊
LM9061EVM 評估模塊演示的是接電負載的高側(cè)保護,用于防護過流和過壓的情況。高側(cè) MOSFET 的柵極驅(qū)動由一個開/關(guān)輸入控制。過流保護會在從 MOSFET 中監(jiān)測到壓降 (VDS) 時啟用,壓降參考的是外部可編程閾值電壓。如果 VDS 電壓因過高的負載電流而超出閾值電壓,MOSFET 的柵極驅(qū)動就會關(guān)閉,從而斷開負載與輸入電源的連接。與負載串聯(lián)的電流感應(yīng)電阻器并非保護電路所必需,這樣可以在較高的電流負載下獲得更高的性能。
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TIDA-00296 — 汽車車身控制模塊驅(qū)動器參考設(shè)計
| 封裝 | 引腳 | CAD 符號、封裝和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
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