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LM5112

正在供貨

用于雙電源操作、具有 4V UVLO 和輸入接地的 3A/7A 單通道柵極驅(qū)動器

可提供此產(chǎn)品的更新版本

功能與比較器件相同，但引腳排列有所不同
UCC27614 正在供貨 具有 4V UVLO、30V VDD 和低傳播延遲的 10A/10A 單通道柵極驅(qū)動器 More recent driver with wide VDD and smaller package options

產(chǎn)品詳情

Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (μs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Single
Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (μs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Single
HVSSOP (DGN) 8 14.7 mm2 3 x 4.9 WSON (NGG) 6 9 mm2 3 x 3
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
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類型 標(biāo)題 下載最新的英語版本 日期
* 數(shù)據(jù)表 LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 數(shù)據(jù)表 (Rev. C) PDF | HTML 2015年 10月 22日
應(yīng)用簡報 了解峰值源電流和灌電流 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
應(yīng)用簡報 適用于柵極驅(qū)動器的外部柵極電阻器設(shè)計指南 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
應(yīng)用簡報 How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
更多文獻(xiàn)資料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
選擇指南 電源管理指南 2018 (Rev. K) 2018年 7月 31日
選擇指南 電源管理指南 2018 (Rev. R) 2018年 6月 25日
更多文獻(xiàn)資料 MOSFET 和 IGBT 柵極驅(qū)動器電路的基本原理 最新英語版本 (Rev.A) 2018年 4月 17日
應(yīng)用簡報 Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日
應(yīng)用手冊 An Alternative Approach to Higher-Power Boost Converters 2009年 11月 30日

設(shè)計和開發(fā)

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評估板

UCC27423-4-5-Q1EVM — UCC2742xQ1 具有使能端的雙路 4A 高速低側(cè) MOSFET 驅(qū)動器評估模塊 (EVM)

UCC2742xQ1 EVM 是一款高速雙 MOSFET 評估模塊，提供了用于快速、輕松啟動 UCC2742xQ1 驅(qū)動器的測試平臺。評估模塊由 4V 至 15V 外部單電源供電，配有一整套測試點和跳線。所有器件均采用單獨的輸入和輸出線路，且共享一個公共接地。評估模塊具備使能 (ENBL) 功能，旨在更好地控制驅(qū)動器應(yīng)用的運(yùn)行，器件的驅(qū)動器信號可通過同一使能引腳啟用或禁用。
用戶指南: PDF
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仿真模型

LM5112 PSpice Transient Model

SNVM300.ZIP (73 KB) - PSpice Model
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仿真模型

LM5112 TINA-TI Transient Reference Design

SNVM391.TSC (579 KB) - TINA-TI Reference Design
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仿真模型

LM5112 TINA-TI Transient Spice Model

SNVM390.ZIP (8 KB) - TINA-TI Spice Model
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仿真模型

LM5112 Unencrypted PSpice Transient Model

SNVMAD6.ZIP (1 KB) - PSpice Model
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HVSSOP (DGN) 8 Ultra Librarian
WSON (NGG) 6 Ultra Librarian

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包含信息：
  • RoHS
  • REACH
  • 器件標(biāo)識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測
包含信息：
  • 制造廠地點
  • 封裝廠地點

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