LM5110
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A sink/3A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25-ns Typical)
- Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
- Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
- Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Shutdown Input Provides Low Power Mode
- Supply Rail Undervoltage Lockout Protection
- Pin-Out Compatible With Industry Standard Gate Drivers
- Packages:
- SOIC-8
- WSON-10 (4 mm × 4 mm)
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
技術(shù)文檔
| 類型 | 標(biāo)題 | 下載最新的英語版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 數(shù)據(jù)表 (Rev. B) | PDF | HTML | 2012年 11月 5日 | ||
| 應(yīng)用簡報(bào) | 了解峰值源電流和灌電流 (Rev. A) | 英語版 (Rev.A) | 2020年 4月 29日 | |||
| 應(yīng)用簡報(bào) | 適用于柵極驅(qū)動(dòng)器的外部柵極電阻器設(shè)計(jì)指南 (Rev. A) | 英語版 (Rev.A) | 2020年 4月 29日 | |||
| 應(yīng)用手冊 | Improving Efficiency of DC-DC Conversion through Layout | 2019年 5月 7日 | ||||
| 應(yīng)用簡報(bào) | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019年 1月 18日 | ||||
| 應(yīng)用簡報(bào) | High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) | 2018年 11月 26日 | ||||
| 更多文獻(xiàn)資料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
| 選擇指南 | 電源管理指南 2018 (Rev. K) | 2018年 7月 31日 | ||||
| 選擇指南 | 電源管理指南 2018 (Rev. R) | 2018年 6月 25日 | ||||
| 更多文獻(xiàn)資料 | MOSFET 和 IGBT 柵極驅(qū)動(dòng)器電路的基本原理 | 最新英語版本 (Rev.A) | 2018年 4月 17日 | |||
| 應(yīng)用簡報(bào) | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018年 3月 16日 |
設(shè)計(jì)和開發(fā)
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| 封裝 | 引腳 | CAD 符號(hào)、封裝和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (DPR) | 10 | Ultra Librarian |
訂購和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識(shí)
- 引腳鍍層/焊球材料
- MSL 等級(jí)/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)
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