LM5109
- Drives both a high side and low side N-Channel MOSFET
- 1A peak output current (1.0A sink / 1.0A source)
- Independent TTL compatible inputs
- Bootstrap supply voltage to 118V DC
- Fast propagation times (27 ns typical)
- Drives 1000 pF load with 15ns rise and fall times
- Excellent propagation delay matching (2 ns typical)
- Supply rail under-voltage lockout
- Low power consumption
- Pin compatible with ISL6700
The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.
技術(shù)文檔
| 類(lèi)型 | 標(biāo)題 | 下載最新的英語(yǔ)版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | LM5109 100V / 1A Peak Half Bridge Gate Driver 數(shù)據(jù)表 | 2005年 4月 26日 | |||
| 白皮書(shū) | Power Electronics in Motor Drives: Where is it? (Rev. A) | 2019年 10月 1日 | ||||
| 更多文獻(xiàn)資料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
| 更多文獻(xiàn)資料 | MOSFET 和 IGBT 柵極驅(qū)動(dòng)器電路的基本原理 | 最新英語(yǔ)版本 (Rev.A) | 2018年 4月 17日 |
設(shè)計(jì)和開(kāi)發(fā)
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| 封裝 | 引腳 | CAD 符號(hào)、封裝和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
訂購(gòu)和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識(shí)
- 引腳鍍層/焊球材料
- MSL 等級(jí)/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測(cè)
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)
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