LM27222
- Adaptive Shoot-through Protection
- 10ns Dead Time
- 8ns Propagation Delay
- 30ns Minimum On-time
- 0.4? Pull-down and 0.9? Pull-up Drivers
- 4.5A Peak Driving Current
- MOSFET Tolerant Design
- 5μA Quiescent Current
- 30V Maximum Input Voltage in Buck Configuration
- 4V to 6.85V Operating Voltage
- SOIC-8 and WSON Packages
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The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically used in synchronous buck regulators. The LM27222 takes the PWM output from a controller and provides the proper timing and drive levels to the power stage MOSFETs. Adaptive shoot-through protection prevents damaging and efficiency reducing shoot-through currents, thus ensuring a robust design capable of being used with nearly any MOSFET. The adaptive shoot-through protection circuitry also reduces the dead time down to as low as 10ns, ensuring the highest operating efficiency. The peak sourcing and sinking current for each driver of the LM27222 is about 3A and 4.5Amps respectively with a Vgs of 5V. System performance is also enhanced by keeping propagation delays down to 8ns. Efficiency is once again improved at all load currents by supporting synchronous, non-synchronous, and diode emulation modes through the LEN pin. The minimum output pulse width realized at the output of the MOSFETs is as low as 30ns. This enables high operating frequencies at very high conversion ratios in buck regulator designs. To support low power states in notebook systems, the LM27222 draws only 5µA from the 5V rail when the IN and LEN inputs are low or floating.
技術(shù)文檔
| 類(lèi)型 | 標(biāo)題 | 下載最新的英語(yǔ)版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | LM27222 High-Speed 4.5A Synchronous MOSFET Driver 數(shù)據(jù)表 (Rev. B) | 2013年 3月 7日 | |||
| 應(yīng)用簡(jiǎn)報(bào) | 了解峰值源電流和灌電流 (Rev. A) | 英語(yǔ)版 (Rev.A) | 2020年 4月 29日 | |||
| 應(yīng)用簡(jiǎn)報(bào) | 適用于柵極驅(qū)動(dòng)器的外部柵極電阻器設(shè)計(jì)指南 (Rev. A) | 英語(yǔ)版 (Rev.A) | 2020年 4月 29日 | |||
| 更多文獻(xiàn)資料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 | ||||
| 更多文獻(xiàn)資料 | MOSFET 和 IGBT 柵極驅(qū)動(dòng)器電路的基本原理 | 最新英語(yǔ)版本 (Rev.A) | 2018年 4月 17日 |
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| 封裝 | 引腳 | CAD 符號(hào)、封裝和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| WSON (NGT) | 8 | Ultra Librarian |
訂購(gòu)和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識(shí)
- 引腳鍍層/焊球材料
- MSL 等級(jí)/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測(cè)
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)
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