可提供此產(chǎn)品的更新版本

功能與比較器件相同，但引腳排列有所不同
UCC27624 正在供貨 具有 4V UVLO、30V VDD 和低傳播延遲的 5A/5A 雙通道柵極驅(qū)動器 More recent driver with higher supply voltage capability

產(chǎn)品詳情

Rating Catalog Features MOSFET Gate Driver Device type Cell monitor and balancer Operating temperature range (°C) -40 to 125
Rating Catalog Features MOSFET Gate Driver Device type Cell monitor and balancer Operating temperature range (°C) -40 to 125
HVSSOP (DGN) 8 14.7 mm2 3 x 4.9
  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground
  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
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類型 標題 下載最新的英語版本 日期
* 數(shù)據(jù)表 EMB1412 MOSFET Gate Driver 數(shù)據(jù)表 (Rev. B) PDF | HTML 2014年 11月 20日
應(yīng)用簡報 了解峰值源電流和灌電流 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
應(yīng)用簡報 適用于柵極驅(qū)動器的外部柵極電阻器設(shè)計指南 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日

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評估板

UCC27423-4-5-Q1EVM — UCC2742xQ1 具有使能端的雙路 4A 高速低側(cè) MOSFET 驅(qū)動器評估模塊 (EVM)

UCC2742xQ1 EVM 是一款高速雙 MOSFET 評估模塊，提供了用于快速、輕松啟動 UCC2742xQ1 驅(qū)動器的測試平臺。評估模塊由 4V 至 15V 外部單電源供電，配有一整套測試點和跳線。所有器件均采用單獨的輸入和輸出線路，且共享一個公共接地。評估模塊具備使能 (ENBL) 功能，旨在更好地控制驅(qū)動器應(yīng)用的運行，器件的驅(qū)動器信號可通過同一使能引腳啟用或禁用。
用戶指南: PDF
TI.com 上無現(xiàn)貨
封裝 引腳 CAD 符號、封裝和 3D 模型
HVSSOP (DGN) 8 Ultra Librarian

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包含信息：
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測
包含信息：
  • 制造廠地點
  • 封裝廠地點

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